Electrophilic terminal arsinidene-iron(0) complexes with a two-coordinated arsenic atom

2019 ◽  
Vol 55 (97) ◽  
pp. 14669-14672 ◽  
Author(s):  
Mahendra K. Sharma ◽  
Beate Neumann ◽  
Hans-Georg Stammler ◽  
Diego M. Andrada ◽  
Rajendra S. Ghadwal
Keyword(s):  
Crystalline Solids ◽  
Arsenic Atom ◽  
Lewis Adduct

The electrophilic arsinidene complexes 5 and 6 featuring a two-coordinated arsenic atom have been isolated as crystalline solids. Complex 5 readily reacts with an NHC nucleophile (IMe4) to give the Lewis adduct 7.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

Cosserat Modeling of Size Effects in Crystalline Solids

2000 ◽  
Vol 653 ◽  
Author(s):  
Samuel Forest
Keyword(s):  
Stress State ◽  
Size Effects ◽  
Elastic Inclusion ◽  
Characteristic Size ◽  
Infinite Matrix ◽  
Crystalline Solids ◽  
Generalized Continua ◽  
Absolute Size ◽  
Kink Bands ◽  
The Matrix

AbstractThe mechanics of generalized continua provides an efficient way of introducing intrinsic length scales into continuum models of materials. A Cosserat framework is presented here to descrine the mechanical behavior of crystalline solids. The first application deals with the problem of the stress field at a crak tip in Cosserat single crystals. It is shown that the strain localization patterns developping at the crack tip differ from the classical picture : the Cosserat continuum acts as a bifurcation mode selector, whereby kink bands arising in the classical framework disappear in generalized single crystal plasticity. The problem of a Cosserat elastic inclusion embedded in an infinite matrix is then considered to show that the stress state inside the inclusion depends on its absolute size lc. Two saturation regimes are observed : when the size R of the inclusion is much larger than a characteristic size of the medium, the classical Eshelby solution is recovered. When R is much small than the inclusion, a much higher stress is reached (for an inclusion stiffer than the matrix) that does not depend on the size any more. There is a transition regime for which the stress state is not homogeneous inside the inclusion. Similar regimes are obtained in the study of grain size effects in polycrystalline aggregates of Cosserat grains.

scholarly journals Spiers Memorial Lecture: Coordination Networks that Switch between Nonporous and Porous Structures: An Emerging Class of Soft Porous Crystals

2021 ◽  
Author(s):  
Michael Zaworotko ◽  
Shi-Qiang Wang ◽  
Soumya Mukherjee
Keyword(s):  
Metal Ions ◽  
Memorial Lecture ◽  
Crystalline Solids ◽  
Porous Structures ◽  
Coordination Networks

Coordination networks (CNs) are a class of (usually) crystalline solids typically comprised of metal ions or cluster nodes linked into 2 or 3 dimensions by organic and/or inorganic linker ligands....

Defects in Crystalline Solids

2019 ◽  
pp. 513-537
Author(s):  
Joginder Singh Galsin
Keyword(s):  
Crystalline Solids
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