Electronic structure of CsPbBr3−xClx perovskites: synthesis, experimental characterization, and DFT simulations

2019 ◽  
Vol 21 (35) ◽  
pp. 18930-18938 ◽  
Author(s):  
Tatiana G. Liashenko ◽  
Evgeniia D. Cherotchenko ◽  
Anatoly P. Pushkarev ◽  
Vidas Pakštas ◽  
Arnas Naujokaitis ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Anion Exchange ◽  
Structural Properties ◽  
Chemical Vapor ◽  
Experimental Characterization ◽  
Dft Simulations ◽  
Halide Perovskite

Cesium lead mixed-halide perovskite thin films were fabricated by using a chemical vapor anion exchange procedure. Optical and structural properties of the materials obtained were studied comprehensively.

Investigating the iodide and bromide ion exchange in metal halide perovskite single crystals and thin films

2021 ◽  
Author(s):  
Qingyi Huang ◽  
Zhe Li ◽  
Xiayan Chen ◽  
Yongkang Xia ◽  
Ziwei Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Single Crystals ◽  
Anion Exchange ◽  
Metal Halide ◽  
Metal Halide Perovskite ◽  
Bromide Ion ◽  
Halide Perovskite

The anion exchange between MAPbX3 (X = I- or Br-) and MAX salts in solution environment is investigated. We find I- can enter MAPbBr3 single crystals (SC) in millimeter scale,...

Anion Exchange in Cesium Lead Halide Perovskite Nanocrystals and Thin Films Using Trimethylsilyl Halide Reagents

2018 ◽  
Vol 30 (15) ◽  
pp. 4887-4891 ◽  
Author(s):  
Sidney E. Creutz ◽  
Evan N. Crites ◽  
Michael C. De Siena ◽  
Daniel R. Gamelin
Keyword(s):  
Thin Films ◽  
Anion Exchange ◽  
Perovskite Nanocrystals ◽  
Halide Perovskite ◽  
Lead Halide

THE INFLUENCE OF METHANE GAS PRESSURE ON THE OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 11 (06) ◽  
pp. 553-558 ◽  
Author(s):  
M. RUSOP ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
S. ADHIKARY ◽  
H. MOKUTANI ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Structural Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

The influence of methane gas ( CH 4) pressure on the optical, electrical and structural properties of the nitrogenated amorphous carbon nitride ( a - C : N ) films grown by microwave surface wave plasma chemical vapor deposition (SWP-CVD) on quartz and silicon (100) substrates have been studied. The a - C : N films are deposited with varying CH 4 gas ranging from 5 to 20 ml/min. To incorporate nitrogen in the film, we have introduced nitrogen gas ( N ) at 5 ml/min in the chamber. The effects of CH 4 gas pressure on the surface morphology, composition, structure, and electrical properties of the N -incorporated camphoric carbon thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES), UV-visible spectroscopy and four-probe resistance measurement. We have succeed in growing a - C : N thin films using SWP-CVD at room temperature and found that the amorphous structure of a - C films can be changed and is strongly dependent on the CH 4 gas source.

Photoelectron Spectroscopy Characterization and Computational Modeling of Gadolinium Nitride Thin Films Synthesized by Chemical Vapor Deposition

2015 ◽  
Vol 1729 ◽  
pp. 131-136
Author(s):  
Zane C. Gernhart ◽  
Juan A. Colón Santana ◽  
Lu Wang ◽  
Wai-Ning Mei ◽  
Chin Li Cheung
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Computational Modeling ◽  
Electronic Properties ◽  
Vapor Deposition ◽  
Density Functional ◽  
Chemical Vapor ◽  
Inverse Photoemission ◽  
Gadolinium Nitride

ABSTRACTHere we report our study of the electronic properties of [100]-textured gadolinium nitride (GdN) thin films synthesized using a chemical vapor deposition (CVD) method. The electronic properties of the films were investigated using photoemission and inverse photoemission spectroscopy coupled with computational modeling. Our density functional theory (DFT) calculations suggest that the theoretically predicted half-metallic electronic structure of GdN is likely due to its low density of states (DOS) at the Fermi level. These calculations are supported by our photoemission and inverse photoemission spectroscopic measurements which show a band gap for the prepared films of a few milli-electron volts, seemingly consistent with the predicted electronic structure. Additionally, the use of a CVD gallium nitride capping layer was found to decelerate the surface oxidation of our GdN samples.

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