DNA interaction of ruthenium(ii) complexes with imidazo[4,5-f][1,10]phenanthroline derivatives

2019 ◽  
Vol 48 (12) ◽  
pp. 3914-3921 ◽  
Author(s):  
Bole Yu ◽  
Thomas W. Rees ◽  
Jiewen Liang ◽  
Chengzhi Jin ◽  
Yu Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Light Scattering ◽  
Gel Electrophoresis ◽  
Dna Interaction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Spectral Titration

The DNA interaction properties of four Ru(ii) complexes with imidazo[4,5-f][1,10]phenanthroline derivatives were investigated by spectral titration, gel electrophoresis (GAR), dynamic light scattering (DLS), zeta potential, atomic force microscopy (AFM), and transmission electron microscopy (TEM).

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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