Spin-filter transport and magnetic properties in a binuclear Cu(ii) expanded porphyrin based molecular junction

2019 ◽  
Vol 48 (23) ◽  
pp. 8418-8426 ◽  
Author(s):  
Nicolás Montenegro-Pohlhammer ◽  
Rodrigo Urzúa-Leiva ◽  
Dayán Páez-Hernández ◽  
Gloria Cárdenas-Jirón
Keyword(s):  
Magnetic Properties ◽  
Transport Properties ◽  
Gate Voltage ◽  
Molecular Junction ◽  
Spin Filter ◽  
Expanded Porphyrin

The Spin-filter transport properties of a magnetically coupled, binuclear Cu(ii) expanded porphyrin based molecular junction, were studied at different bias and gate voltage values, through the DFT-NEGF methodology.

Transport Properties of FeSi with Cobalt Impurities

2010 ◽  
Vol 168-169 ◽  
pp. 493-496
Author(s):  
G.Y. Yurkin ◽  
G.S. Patrin ◽  
V.V. Beletsky ◽  
D.A. Velikanov
Keyword(s):  
Magnetic Properties ◽  
Transport Properties ◽  
Electron Scattering ◽  
Experimental Investigations ◽  
Kondo Model

The results of experimental investigations of Fe1-xCoxSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

(BEDT-TTF)6(CuX2Y2)2 (X=Br; Y=Cl or Br): Electrical transport properties under pressure and magnetic properties

1993 ◽  
Vol 56 (1) ◽  
pp. 2347-2352 ◽  
Author(s):  
M. Kurmoo ◽  
D. Kanazawa ◽  
P. Day ◽  
I.R. Marsden ◽  
M. Allan ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

scholarly journals Symmetry-Dependent Spin Transport Properties and Spin-Filter Effects in Zigzag-Edged Germanene Nanoribbons

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Can Cao ◽  
Mengqiu Long ◽  
Xiancheng Mao
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Mirror Plane ◽  
First Principles Calculations ◽  
Spin Filter ◽  
Linear Current ◽  
Current Voltage ◽  
Resistance State ◽  
Parallel Configuration ◽  
Dependent Transport

We performed the first-principles calculations to investigate the spin-dependent electronic transport properties of zigzag-edged germanium nanoribbons (ZGeNRs). We choose of ZGeNRs with odd and even widths of 5 and 6, and the symmetry-dependent transport properties have been found, although theσmirror plane is absent in ZGeNRs. Furthermore, even-Nand odd-NZGeNRs have very different current-voltage relationships. We find that the even 6-ZGeNR shows a dual spin-filter effect in antiparallel (AP) magnetism configuration, but the odd 5-ZGeNR behaves as conventional conductors with linear current-voltage dependence. It is found that when the two electrodes are in parallel configuration, the 6-ZGeNR system is in a low resistance state, while it can switch to a much higher resistance state when the electrodes are in AP configuration, and the magnetoresistance of 270% can be observed.

The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 127-131
Author(s):  
Gang Xiang ◽  
Xi Zhang
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transport Properties ◽  
Ferromagnetic Semiconductor ◽  
Doping Effect ◽  
Hall Resistance ◽  
Co Doping ◽  
Transport Studies ◽  
Semiconductor Thin Films ◽  
Curie Temperatures

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

COTUNNELING AND KONDO-TYPE TRANSPORT OF A QUANTUM DOT

2000 ◽  
Vol 14 (17) ◽  
pp. 1743-1752
Author(s):  
SHI-JIE XIONG
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Single Particle ◽  
Gate Voltage ◽  
Electron Interaction ◽  
Kondo Temperature ◽  
Channel Network ◽  
Strong Electron ◽  
Multi Level

We investigate the transport properties of a multi-level quantum dot with strong electron–electron interaction by the use of the equivalent single-particle multi-channel network and Landauer formulae. By including the effect of cotunneling to the leads the calculated results show Kondo-type transport in valleys of conductance as a function of the gate voltage which was found in recent experiments. We calculate the Kondo temperature for various parameters. We discuss the condition for observing this effect in the experiments.

scholarly journals Transport properties of a three-shell icosahedral matryoshka cluster: a first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12704-12710 ◽  
Author(s):  
Lu Zhang ◽  
Jing Huang ◽  
Weiyi Wang ◽  
Qunxiang Li ◽  
Jinlong Yang
Keyword(s):  
Transport Properties ◽  
Magnetic Moment ◽  
First Principles ◽  
Molecular Devices ◽  
Molecular Junction ◽  
First Principles Study ◽  
Cluster A ◽  
Filtering Effect ◽  
Spin Filtering

The molecular junction based on three-shell icosahedral matryoshka cluster with huge magnetic moment exhibits robust spin-filtering effect, which highlights it for promising applications in molecular devices.

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