Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emission Characteristics ◽  
Ion Beam Etching

scholarly journals Research of FIB local milling processes for creation of nanosized field emission structures

2021 ◽  
Vol 2086 (1) ◽  
pp. 012201
Author(s):  
I V Panchenko ◽  
N A Shandyba ◽  
A S Kolomiytsev
Keyword(s):  
Field Emission ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Studies ◽  
Current Voltage Characteristic ◽  
Ion Beam Etching ◽  
Surface Profiling ◽  
Current Voltage ◽  
Wide Range ◽  
Maximum Current

Abstract The paper presents the results of experimental studies of the influence of the main parameters of a focused ion beam (FIB) during surface profiling on the accuracy of transfer of a pattern to a silicon substrate to create nanoscale field emission structures. In this work, the optimal FIB currents are determined, introducing a minimum amount of distortions during the formation of structures of various sizes. The possibilities of the method of local ion-beam etching of structures in a wide range from 0.1 to 2 μm are shown. The prospects of using this technology for the creation of field emission structures have been demonstrated. It is determived the current-voltage characteristic of the fabricated field-emission cells with a threshold voltage of the onset of emission of ∼ 2.5 V and a maximum current of 300 nA at 30 V.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Stable field-emission from a CeB6 nanoneedle point electron source

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuai Tang ◽  
Jie Tang ◽  
Yimeng Wu ◽  
You-Hu Chen ◽  
Jun Uzuhashi ◽  
...  
Keyword(s):  
Field Emission ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Source ◽  
Emission Current ◽  
Field Emission Current ◽  
Stable Field ◽  
Single Emission

A single CeB6 nanoneedle structure has been fabricated using a focused ion beam (FIB) and it shows an excellent field emission current stability as well as a single emission spot.

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