Geometrical design of an alignment mark for focused ion beam implantation in GaAs using Monte Carlo simulation of ion trajectories

1987 ◽  
Vol 5 (1) ◽  
pp. 236 ◽  
Author(s):  
Tetsuo Morita
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Geometrical Design ◽  
Ion Beam Implantation ◽  
Alignment Mark

scholarly journals Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga+ and Ne+ etching of SiO2 in the presence of a XeF2 precursor gas

2019 ◽  
Vol 1 (9) ◽  
pp. 3584-3596 ◽  
Author(s):  
Kyle T. Mahady ◽  
Shida Tan ◽  
Yuval Greenzweig ◽  
Amir Raveh ◽  
Philip D. Rack
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Successful Development ◽  
Nanoscale Material ◽  
Ion Beam Etching

Successful development of a Monte Carlo simulation that accurately emulates gas assisted nanoscale focused ion beam etching.

Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4046-4048 ◽  
Author(s):  
Hiroki Kondo ◽  
Hirotaka Iwano ◽  
Osamu Nakatsuka ◽  
Kazutaka Kaga ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Hopping Conduction ◽  
Ion Beam Implantation
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