Furrowed hole-transport layer using argon plasma in an inverted perovskite solar cell

2019 ◽  
Vol 43 (36) ◽  
pp. 14625-14633 ◽  
Author(s):  
Xiao-Mei Li ◽  
Kai-li Wang ◽  
Yu-Rong Jiang ◽  
Ying-Guo Yang ◽  
Xing-Yu Gao ◽  
...  

In this study, a novel process was found to be effective using the argon-plasma treatment, in which the ion cluster was used to scour the PEDOT:PSS surface instead of the traditional bombardment method. The photoelectric conversion efficiency of the device reaches 14.8%.

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2110
Author(s):  
Syed Abdul Moiz ◽  
Ahmed N. M. Alahmadi

Halide based perovskite offers numerous advantages such as high-efficiency, low-cost, and simple fabrication for flexible solar cells. However, long-term stability as well as environmentally green lead-free applications are the real challenges for their commercialization. Generally, the best reported perovskite solar cells are composed of toxic lead (Pb) and unstable polymer as the absorber and electron/hole-transport layer, respectively. Therefore, in this study, we proposed and simulated the photovoltaic responses of lead-free absorber such as cesium titanium (IV) bromide, Cs2TiBr6 with dopant free electron phenyl-C61-butyric acid methyl ester (PCBM), and dopant free hole transport layer N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) for the Ag/BCP/PCBM/Cs2TiBr6/NPB/ITO based perovskite solar cell. After comprehensive optimization of each layer through vigorous simulations with the help of software SCAPS 1D, it is observed that the proposed solar cell can yield maximum power-conversion efficiency up to 16.85%. This efficiency is slightly better than the previously reported power-conversion efficiency of a similar type of perovskite solar cell. We believe that the outcome of this study will not only improve our knowledge, but also triggers further investigation for the dopant and lead-free perovskite solar cell.


2021 ◽  
Author(s):  
Atul kumar

Abstract Fill factor (FF) deficit and stability is a primary concern with the perovskite solar cell. Resistance values and band alignment at junction interface in perovskite are causing low fill factor. Moisture sensitivity of methylammonium lead halide perovskite is causing a stability issue. We tried to solve these issues by using inorganic hole transport layer (HTL). FF is sensitive to the band offset values. We study the band alignment/band offset effect at the Perovskite /HTL junction. Inorganic material replacing Spiro-MeOTAD can enhance the stability of the device by providing an insulation from ambient. Our simulation study shows that the earth abundant p-type chalcogenide materials of SnS as HTL in perovskite is comparable to Spiro-MeOTAD efficiency.


Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 978
Author(s):  
Chaoqun Lu ◽  
Weijia Zhang ◽  
Zhaoyi Jiang ◽  
Yulong Zhang ◽  
Cong Ni

The hole transport layer (HTL) is one of the main factors affecting the efficiency and stability of perovskite solar cells (PSCs). However, obtaining HTLs with the desired properties through current preparation techniques remains a challenge. In the present study, we propose a new method which can be used to achieve a double-layer HTL, by inserting a CuI layer between the perovskite layer and Spiro-OMeTAD layer via a solution spin coating process. The CuI layer deposited on the surface of the perovskite film directly covers the rough perovskite surface, covering the surface defects of the perovskite, while a layer of CuI film avoids the defects caused by Spiro-OMetad pinholes. The double-layer HTLs improve roughness and reduce charge recombination of the Spiro-OMeTAD layer, thereby resulting in superior hole extraction capabilities and faster hole mobility. The CuI/Spiro-OMeTAD double-layer HTLs-based devices were prepared in N2 gloveboxes and obtained an optimized PCE (photoelectric conversion efficiency) of 17.44%. Furthermore, their stability was improved due to the barrier effect of the inorganic CuI layer on the entry of air and moisture into the perovskite layer. The results demonstrate that another deposited CuI film is a promising method for realizing high-performance and air-stable PSCs.


2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Jeongmin Lim ◽  
Seong Young Kong ◽  
Yong Ju Yun

Inorganic-organic mesoscopic solar cells become a promising alternative for conventional solar cells. We describe a CH3NH3PbI3 perovskite-sensitized solid-state solar cells with the use of different polymer hole transport materials such as 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD), poly(3-hexylthiophene-2,5-diyl) (P3HT), and poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7). The device with a spiro-OMeTAD-based hole transport layer showed the highest efficiency of 6.9%. Interestingly, the PTB7 polymer, which is considered an electron donor material, showed dominant hole transport behaviors in the perovskite solar cell. A 200 nm thin layer of PTB7 showed comparatively good efficiency (5.5%) value to the conventional spiro-OMeTAD-based device.


2018 ◽  
Vol 3 (5) ◽  
pp. 1122-1127 ◽  
Author(s):  
Lukas Wagner ◽  
Sijo Chacko ◽  
Gayathri Mathiazhagan ◽  
Simone Mastroianni ◽  
Andreas Hinsch

2018 ◽  
Vol 67 ◽  
pp. 01021 ◽  
Author(s):  
Istighfari Dzikri ◽  
Michael Hariadi ◽  
Retno Wigajatri Purnamaningsih ◽  
Nji Raden Poespawati

Research in solar cells is needed to maximize Indonesia’s vast solar potential that can reach up to 207.898 MW with an average radiation of 4.8 kWh/m2/day. Organometallic perovskite solar cells (PSCs) have gained immense attention due to their rapid increase in efficiency and compatibility with low-cost fabrication methods. Understanding the role of hole transport layer is very important to obtain highly efficient PSCs. In this work, we studied the effect of Hole Transport Layer (HTL) to the performance of perovskite solar cell. The devices with HTL exhibit substantial increase in power conversion efficiency, open circuit voltage and short circuit current compared to the device without HTL. The best performing device is PSC with CuSCN as HTL layer, namely Voc of 0.24, Isc of 1.79 mA, 0.27 FF and efficiency of 0.09%.


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