Tailoring energy level and surface basicity of metal oxide semiconductors by rare-earth incorporation for high-performance formaldehyde detection

2019 ◽  
Vol 6 (7) ◽  
pp. 1767-1774 ◽  
Author(s):  
Yanfang Zhao ◽  
Xiaoxin Zou ◽  
Hui Chen ◽  
Xuefeng Chu ◽  
Guo-Dong Li
Keyword(s):  
Rare Earth ◽  
Energy Level ◽  
Metal Oxide ◽  
Fermi Level ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Surface Basicity

The elevated Fermi level and increased surface basicity of 5Y-In2O3 led to the improvement of response and selectivity towards formaldehyde.

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors

2020 ◽  
Vol 12 (22) ◽  
pp. 25000-25010
Author(s):  
Jae Cheol Shin ◽  
Sung Min Kwon ◽  
Jingu Kang ◽  
Seong Pil Jeon ◽  
Jae-Sang Heo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Earth Abundant ◽  
Catalytic Metal

Unpinning of the Fermi level and tunneling in metal oxide semiconductors

2008 ◽  
Vol 92 (16) ◽  
pp. 162104 ◽  
Author(s):  
C. Malagù ◽  
G. Martinelli ◽  
M. A. Ponce ◽  
C. M. Aldao
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors
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