Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors

Author(s):  
Yuqing Zhang ◽  
Zhihe Xia ◽  
Jiapeng Li ◽  
Yang Shao ◽  
Sisi Wang ◽  
...  
2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.


2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.


2020 ◽  
Vol 22 (3) ◽  
pp. 1591-1597 ◽  
Author(s):  
Huiru Wang ◽  
Jiawei He ◽  
Yongye Xu ◽  
Nicolas André ◽  
Yun Zeng ◽  
...  

Hydrogen (H) dopants’ role and active defects inside n-type metal oxide semiconductors (MOXs) are comprehensively studied via continuous H plasma treatment.


2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  

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