Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors

2020 ◽  
Vol 12 (22) ◽  
pp. 25000-25010
Author(s):  
Jae Cheol Shin ◽  
Sung Min Kwon ◽  
Jingu Kang ◽  
Seong Pil Jeon ◽  
Jae-Sang Heo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Earth Abundant ◽  
Catalytic Metal

Low-Impurity High-Performance Solution-Processed Metal Oxide Semiconductors via a Facile Redox Reaction

2015 ◽  
Vol 27 (13) ◽  
pp. 4713-4718 ◽  
Author(s):  
Huajun Chen ◽  
You Seung Rim ◽  
Chengyang Jiang ◽  
Yang Yang
Keyword(s):  
Metal Oxide ◽  
Redox Reaction ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21610-21616
Author(s):  
Dingwei Li ◽  
Momo Zhao ◽  
Kun Liang ◽  
Huihui Ren ◽  
Quantan Wu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
High Gain ◽  
Power Source ◽  
Metal Oxide Semiconductors ◽  
Low Power Consumption ◽  
Light Weight ◽  
Solution Processed ◽  
Oxide Semiconductors

Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.

Tailoring energy level and surface basicity of metal oxide semiconductors by rare-earth incorporation for high-performance formaldehyde detection

2019 ◽  
Vol 6 (7) ◽  
pp. 1767-1774 ◽  
Author(s):  
Yanfang Zhao ◽  
Xiaoxin Zou ◽  
Hui Chen ◽  
Xuefeng Chu ◽  
Guo-Dong Li
Keyword(s):  
Rare Earth ◽  
Energy Level ◽  
Metal Oxide ◽  
Fermi Level ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Surface Basicity

The elevated Fermi level and increased surface basicity of 5Y-In2O3 led to the improvement of response and selectivity towards formaldehyde.

scholarly journals Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

2015 ◽  
Vol 25 (11) ◽  
pp. 1727-1736 ◽  
Author(s):  
John G. Labram ◽  
Yen-Hung Lin ◽  
Kui Zhao ◽  
Ruipeng Li ◽  
Stuart R. Thomas ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Ultrathin Layers ◽  
Energy States
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