Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

2019 ◽  
Vol 7 (46) ◽  
pp. 14543-14554 ◽  
Author(s):  
Sadia Baig ◽  
Arthur D. Hendsbee ◽  
Pankaj Kumar ◽  
Safeer Ahmed ◽  
Yuning Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Characterization Study ◽  
Transparent Thin Film Transistor

A transparent thin film transistor of yttrium-doped CuSCN has been devised with a remarkable hole mobility of 0.99 cm2 V−1 s−1.

Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1879-1884 ◽  
Author(s):  
Woo-Seok Cheong ◽  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Transparent Thin Film Transistor

scholarly journals Variation of the Side Chain Branch Position Leads to Vastly Improved Molecular Weight and OPV Performance in 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene/2,1,3-benzothiadiazole Copolymers

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Robert C. Coffin ◽  
Christopher M. MacNeill ◽  
Eric D. Peterson ◽  
Jeremy W. Ward ◽  
Jack W. Owen ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Thin Film Transistor ◽  
Power Conversion ◽  
Hole Mobility ◽  
Side Chain ◽  
Side Chains ◽  
Absorption Profile ◽  
Polymer Backbone ◽  
Chain Branch

Through manipulation of the solubilizing side chains, we were able to dramatically improve the molecular weight(Mw)of 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene (BDT)/2,1,3-benzothiadiazole (BT) copolymers. When dodecyl side chains (P1) are employed at the 4- and 8-positions of the BDT unit, we obtain a chloroform-soluble copolymer fraction withMwof 6.3 kg/mol. Surprisingly, by moving to the commonly employed 2-ethylhexyl branch (P2),Mwdecreases to 3.4 kg/mol. This is despite numerous reports that this side chain increases solubility andMw. By moving the ethyl branch in one position relative to the polymer backbone (1-ethylhexyl,P3),Mwis dramatically increased to 68.8 kg/mol. As a result of thisMwincrease, the shape of the absorption profile is dramatically altered, withλmax= 637 nm compared with 598 nm forP1and 579 nm forP2. The hole mobility as determined by thin film transistor (TFT) measurements is improved from~1×10−6 cm2/Vs forP1andP2to7×10−4 cm2/Vs forP3, while solar cell power conversion efficiency in increased to2.91%forP3relative to0.31%and0.19%forP1andP2, respectively.

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