scholarly journals Cu(iii)–bis-thiolato complex forms an unusual mono-thiolato Cu(iii)–peroxido adduct

2021 ◽  
Vol 57 (1) ◽  
pp. 69-72
Author(s):  
Jane M. Donnelly ◽  
Frederik Lermyte ◽  
Juliusz A. Wolny ◽  
Marc Walker ◽  
Ben G. Breeze ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Fticr Ms ◽  
Planar Complex ◽  
Square Planar ◽  
Complex Forms

The square-planar complex [bis(toluene-3,4-dithiolato)copper(iii)][NEt3H], characterised by X-ray photoelectron spectroscopy and DFT, fragments in FTICR-MS to form [(toluene-3,4-dithiolato)Cu(iii)(peroxide)]− by reaction with O2.

Tripod-Liganden mit zwei verschiedenen Donorgruppen: Synthese und Koordinationsverhalten von H3CCH(CH2PPh2)2(CH2OH) / Tripod Ligands with Two Different Donor Groups: Synthesis and Coordination of H3CC(CH2PPh2)2(CH2OH)

1994 ◽  
Vol 49 (7) ◽  
pp. 889-897 ◽  
Author(s):  
Andreas Muth ◽  
Gunther Reinhard ◽  
Gottfried Huttner ◽  
Thomas Seitz ◽  
Thomas Klein ◽  
...  
Keyword(s):  
Analytical Methods ◽  
Bidentate Ligands ◽  
Tetrahedral Complex ◽  
X Ray ◽  
Planar Complex ◽  
Square Planar ◽  
Tripod Ligands

Abstract Starting from pentaglycerin, H3CC(CH2OH)3, a convenient three step synthesis of the tri­pod ligand H3CC(CH2PPh2)2(CH2OH) (3) (abbreviated as PPO(H)) is described and its struc­ture is established by the usual analytical methods as well as by X-ray analysis. The ligand behaves as a bidentate donor towards nickel(II) as shown by the formation and X-ray analysis of the complex {PPO(H)}NiBr2 (4). In the square planar complex 4 only the PPh2 groups are coordinated. In the tetrahedral complex [{PPO(H)}2Ni](BF4)2 (5) two PPO(H) ligands sur­round nickel as bidentate ligands.

X-ray photoelectron spectroscopy of tetrahedral and square planar nickel(II) compounds

1972 ◽  
Vol 8 (12) ◽  
pp. 1085-1091 ◽  
Author(s):  
Luis J. Matienzo ◽  
William E. Swartz ◽  
Samuel O. Grim
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Square Planar

Structural Chemistry of the Platinum Group Metals: the Palladacyclopentane Complex (Butane-1,4-diyl)(N,N,N',N'-tetramethylethylenediamine)palladium(II)

1994 ◽  
Vol 47 (11) ◽  
pp. 2119 ◽  
Author(s):  
AJ Canty ◽  
BW Skelton ◽  
PR Traill ◽  
AH White
Keyword(s):  
Single Crystal ◽  
Structure Determination ◽  
Structural Chemistry ◽  
Platinum Group Metals ◽  
X Ray ◽  
Planar Complex ◽  
Square Planar ◽  
Platinum Group

A single-crystal X-ray structure determination of the reagent (butane-1,4-diyl)(N,N,N′,N′- tetramethylethylenediamine)palladium(II) has shown that crystals are orthorhombic, Pbca, a 15.832(3), b 14.128(9), c 11.451(3) Ǻ, Z 8. The square planar complex has puckered PdCH2CH2CH2CH2 and PdNMe2CH2CH2NMe2 rings in which the outer carbon atoms deviate by c. �0.35 Ǻ from the 'PdC2N2' mean plane.

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger
Keyword(s):  
Photoelectron Spectroscopy ◽  
Two Dimensional ◽  
X Ray

BONDS IN AMORPHOUS Nb1-xSixSTUDIED BY X-RAY EMISSION AND X-RAY PHOTOELECTRON SPECTROSCOPY

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1025-C9-1028 ◽  
Author(s):  
W. ZAHOROWSKI ◽  
A. SIMUNEK ◽  
G. WIECH ◽  
K. SÖLDNER ◽  
R. KNAUF ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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