Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

2017 ◽  
Vol 47 (11) ◽  
pp. 1126-1138
Author(s):  
Chao HE ◽  
ZuJian WANG ◽  
XiaoMing YANG ◽  
XiFa LONG

CrystEngComm ◽  
2016 ◽  
Vol 18 (12) ◽  
pp. 2081-2088 ◽  
Author(s):  
Hairui Liu ◽  
Philippe Veber ◽  
Jurij Koruza ◽  
Daniel Rytz ◽  
Michael Josse ◽  
...  

A series of centimeter-sized lead-free piezoelectric Li+- and Ta5+-modified (Na,K)NbO3 single crystals with an ABO3 perovskite structure was successfully grown by the top-seeded solution growth method.


2002 ◽  
Vol 236 (1-3) ◽  
pp. 210-216 ◽  
Author(s):  
Shujun Zhang ◽  
Laurent Lebrun ◽  
Sorah Rhee ◽  
Richard E Eitel ◽  
Clive A Randall ◽  
...  

1997 ◽  
Vol 177 (3-4) ◽  
pp. 211-216 ◽  
Author(s):  
K. Polgár ◽  
Á. Péter ◽  
L. Kovács ◽  
G. Corradi ◽  
Zs. Szaller

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7003-7007 ◽  
Author(s):  
Chengpeng Hu ◽  
Hao Tian ◽  
Xiangda Meng ◽  
Guang Shi ◽  
Wenwu Cao ◽  
...  

A large-sized, high-quality single crystal of K0.47Na0.53NbO3 was grown by the top-seeded solution growth method.


2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.


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