scholarly journals High-quality K0.47Na0.53NbO3 single crystal toward high performance transducer

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7003-7007 ◽  
Author(s):  
Chengpeng Hu ◽  
Hao Tian ◽  
Xiangda Meng ◽  
Guang Shi ◽  
Wenwu Cao ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Growth Method ◽  
Top Seeded Solution Growth

A large-sized, high-quality single crystal of K0.47Na0.53NbO3 was grown by the top-seeded solution growth method.

scholarly journals Flux Single Crystal Growth of BaFe12−xTixO19 with Titanium Gradient

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 264
Author(s):  
Vladimir E. Zhivulin ◽  
Evgeny A. Trofimov ◽  
Olga V. Zaitseva ◽  
Dmitry A. Zherebtsov ◽  
Danil A. Uchaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Barium Hexaferrite ◽  
Solution Growth ◽  
Controlled Cooling ◽  
Substitution Level ◽  
Growth Method ◽  
Ti Substitution ◽  
Relationship Of ◽  
Top Seeded Solution Growth ◽  
The Relationship

Titanium substituted barium hexaferrite BaFe12−xTixO19 single crystal was grown by the top seeded solution growth method from flux on the seed with controlled cooling below 1175 °C. Titanium substitution level gradient in the single crystal in the vertical and horizontal directions was studied. Two planes were cut and polished. A justification for the linear gradient of Ti substitution in a BaFe12−xTixO19 single crystal is proposed; substitution levels in the center and periphery were determined. It was shown that upon growth by the top seeded solution growth method, crystals with a linear Ti substitution level gradient from x = 0.73 to x = 0.77 for a distance of 11 mm along pulling direction were obtained. The study led to the conclusion about the relationship of the gradient and changes in the composition of the nutrient solution.

Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Single Crystals ◽  
Solution Growth ◽  
High Curie Temperature ◽  
High Quality ◽  
Domain Structures ◽  
Growth Method ◽  
Top Seeded Solution Growth

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Solution Growth ◽  
High Quality ◽  
Preferential Growth ◽  
Bulk Crystal Growth ◽  
Seed Crystals ◽  
Growth Method ◽  
The Difference ◽  
Top Seeded Solution Growth

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure

2011 ◽  
Vol 485 ◽  
pp. 73-76
Author(s):  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Single Crystals ◽  
Oxygen Pressure ◽  
High Performance ◽  
Piezoresponse Force Microscopy ◽  
High Oxygen ◽  
Solution Growth ◽  
Force Microscopy ◽  
High Oxygen Pressure ◽  
Growth Method ◽  
Top Seeded Solution Growth

High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.

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