Identifying the origin of the Voc deficit of kesterite solar cells from the two grain growth mechanisms induced by Sn2+ and Sn4+ precursors in DMSO solution

2021 ◽  
Vol 14 (4) ◽  
pp. 2369-2380 ◽  
Author(s):  
Yuancai Gong ◽  
Yifan Zhang ◽  
Qiang Zhu ◽  
Yage Zhou ◽  
Ruichan Qiu ◽  
...  

The large Voc deficit of kesterite solar cell mainly comes from the defective surface caused by multi-phase fusion grain growth; direct phase transformation grain growth produces high quality absorber with clean surface and thus high device Voc.

2020 ◽  
Vol 4 (9) ◽  
pp. 4506-4515
Author(s):  
Zeyang Zhang ◽  
Fengqin He ◽  
Weidong Zhu ◽  
Dandan Chen ◽  
Wenming Chai ◽  
...  

High-quality CsPbIBr2 films with a much lower self-doping level are obtained by the use of a CsI-rich precursor, which enables the fabrication of an all-inorganic, carbon-based solar cell with a superior efficiency of 10.48%.


2014 ◽  
Vol 7 (6) ◽  
pp. 1907-1912 ◽  
Author(s):  
Emily D. Kosten ◽  
Brendan M. Kayes ◽  
Harry A. Atwater

Enhanced open-circuit voltage demonstrated in a high quality GaAs solar cell by limiting the angles of emitted light from the cell.


1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yang ◽  
S. Guha

AbstractOne of the most effective techniques used to obtain high quality amorphous silicon alloys is the use of hydrogen dilution during film growth. The resultant material exhibits a more ordered microstructure and gives rise to high efficiency solar cells. As the hydrogen dilution increases, however, a threshold is reached, beyond which microcrystallites begin to form rapidly. In this paper, we review some of the interesting features associated with the thin film materials obtained from various hydrogen dilutions. They include the observation of linear-like objects in the TEM micrograph, a shift of the principal Si TO band in the Raman spectrum, a sharp, low temperature peak in the H2 evolution spectrum, a shift of the wagging mode in the IR spectrum, and a narrowing of the Si (111) peak in the X-ray diffraction pattern. These spectroscopic tools have allowed us to optimize deposition conditions to near the threshold of microcrystallinity and obtain desired high quality materials. Incorporation of the improved materials into device configuration has significantly enhanced the solar cell performance. Using a spectral-splitting, triple-junction configuration, the spectral response of a typical high efficiency device spans from below 350 nm to beyond 950 nm with a peak quantum efficiency exceeding 90%; the triple stack generates a photocurrent of 27 mA/cm2. This paper describes the effect of the improved materials on various solar cell structures, including a 13% active-area, stable triple-junction device.


Nanoscale ◽  
2015 ◽  
Vol 7 (24) ◽  
pp. 10595-10599 ◽  
Author(s):  
Yaoguang Rong ◽  
Zhongjia Tang ◽  
Yufeng Zhao ◽  
Xin Zhong ◽  
Swaminathan Venkatesan ◽  
...  

The formation of intermediate phase of (CH3NH3)2Pb3I8·2DSMO in the solution process benefits the growth of high-quality perovskite CH3NH3PbI3film.


RSC Advances ◽  
2015 ◽  
Vol 5 (108) ◽  
pp. 88973-88978 ◽  
Author(s):  
Di Li ◽  
Yanli Chen ◽  
Peng Du ◽  
Zhao Zhao ◽  
Haifeng Zhao ◽  
...  

An annealing-free TiO2 electron collection layer in organic solar cell based on ultrafine, clean and high-quality anatase TiO2 nanocrystals.


1992 ◽  
Vol 242 ◽  
Author(s):  
K. Ninomiya ◽  
H. Haku ◽  
H. Tarui ◽  
N. Nakamura ◽  
M. Tanaka ◽  
...  

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.


2018 ◽  
Vol 6 (34) ◽  
pp. 16347-16354 ◽  
Author(s):  
Meiyue Liu ◽  
Ziming Chen ◽  
Qifan Xue ◽  
Sin Hang Cheung ◽  
Shu Kong So ◽  
...  

Vacuum-assisted thermal annealing not only could improve film morphology and crystallinity, but also could accelerate the sublimation of undesired MACl. With the help of this process, we obtain a highly efficient low-bandgap CH3NH3Sn0.5Pb0.5IxCl3−x perovskite solar cell with a power conversion efficiency of 12.3%.


2017 ◽  
Vol 19 (3) ◽  
pp. 795-802 ◽  
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Ling Wei ◽  
Shou-Yi Kuo

An evaporation-processed Cu2ZnSnSe4 thin film solar cell with a conversion efficiency of 7.18% was facilely fabricated in an environmentally benign selenium atmosphere.


2016 ◽  
Vol 4 (32) ◽  
pp. 12535-12542 ◽  
Author(s):  
Weidong Zhu ◽  
Chunxiong Bao ◽  
Bihu Lv ◽  
Faming Li ◽  
Yong Yi ◽  
...  

A homogeneous cap-mediated crystallization strategy can be used to realize high-quality organolead triiodide perovskite (OTP) films with greatly enhanced solar cell performance.


2018 ◽  
Vol 6 (41) ◽  
pp. 20289-20296 ◽  
Author(s):  
Deli Shen ◽  
Haijuan Mao ◽  
Yafeng Li ◽  
Antonio Abate ◽  
Mingdeng Wei

A feasible and facile method to control the nucleation and growth process of perovskite grains is introduced for conductive glass to assist the perovskite film annealing process, and a maximum PCE of 18.08% can be achieved in the ultimately formed perovskite solar cell.


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