High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

1992 ◽  
Vol 242 ◽  
Author(s):  
K. Ninomiya ◽  
H. Haku ◽  
H. Tarui ◽  
N. Nakamura ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Type A ◽  
Wide Bandgap ◽  
Dilution Method ◽  
High Quality ◽  
Bond Density ◽  
Si Solar Cell ◽  
P Type

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

1989 ◽  
Vol 164 ◽  
Author(s):  
T. Matsuyama ◽  
M. Nishikuni ◽  
M. Kameda ◽  
S. Okamoto ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Solid Phase ◽  
Wavelength Region ◽  
Optical Transmittance ◽  
High Quality ◽  
Long Wavelength ◽  
Si Solar Cell ◽  
Si Films ◽  
P Type

AbstractWe have achieved the highest total area conversion efficiency for an integrated type 10cm × 10cm a-Si solar cell at 10.2%. This value is the world record for a 10cm × 10cm a-Si solar cell. For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high-photosensitivity in the long wavelength region and materials with high conductivity. We have developed a Solid Phase Crystallization (SPC) method of growing a Si crystal at temperatures as low as 600°C. Using this method, thin-film polycrystalline silicon (poly-Si) with higP-photosensitivity in the long wavelength region and Hall mobility of 70cm2/V sec was obtained and quantum efficiency in the range of 800,∼ lO00nm was achieved up to 80% in the n-type poly-Si with grain size of about 2μm. We also succeeded in preparing a device-quality p-type microcrystalline silicon (μc-Si) using the SPC method at 620°C for 3 hours from the conventional plasma-CVD p-type amorphous silicon (a-5i) withoul using any post-doping process. Obtained properties of μd=2 × 103 (.cm) and a high optical transmittance in the 2.0 ∼ 3.0 eV range are better as a window material than the conventional p-type μc-Si:H. Therefore, it was concluded that the SPC method is better as a new technique to prepare high-quality solar cell materials.

A More Than 18% Efficiency Hit Structure a-Si/c-Si Solar Cell Using Artificially Constructed Junction (ACJ)

1992 ◽  
Vol 258 ◽  
Author(s):  
Y. Kuwano ◽  
S. Nakano ◽  
M. Tanaka ◽  
T. Takahama ◽  
T. Matsuyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Layer Structure ◽  
Type A ◽  
Interface Layer ◽  
Material Technology ◽  
Si Solar Cell

ABSTRACTWe have obtained the world's highest total area conversion efficiency of 11.1% for a 100cm2 integrated-type single-junction a-Si solar cell submodule. This was achieved by the development of various advanced technologies, such as a new ultra-thin i/n interface layer and a new laser patterning method using an ablation phenomenon.To acheive further improvement in the conversion efficiency of a-Si based solar cells, we focus on polycrystalline silicon (poly-Si) thin-film for a-Si/poly-Si tandem solar cells. As far as material technology is concerned, we have used a new solid phase crystallization (SPC) method from amorphous silicon (a-Si) films deposited by plasma-CVD. The maximum mobility of 623 cm2/V.s was achieved on textured substrates at a carrier concentration of 3.0 × 1015 cm-3. This film has been applied to the active layer of poly-Si solar cells on metal substrates and a conversion efficiency of 6.2% has been obtained with poly-Si film of 12 μm thickness made by SPC at 600°C.In the field of device technology, we have developed new artificially constructed junction (ACJ) solar cells using p-type a-Si/i-type a-Si/n-type crystalline silicon (c-Si). We call this a HIT (Heterojunction with Intrinsic Ihin-layer) structure, and we have achieved a conversion efficiency of 18.1% for this type of solar cells. This is the highest reported value for a cell with a junction fabricated at low temperature (∼ 120°C).

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

scholarly journals Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Sunhwa Lee ◽  
Seungman Park ◽  
Jinjoo Park ◽  
Youngkuk Kim ◽  
Hyeongsik Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Spectroscopic Study ◽  
Type A ◽  
Si Solar Cell ◽  
Type Layer ◽  
P Type

Achievement of More than 10% Efficiency for a Single-Junction 100cm2 a-Si Solar Cell and Development of a New-Type Module Structure

1990 ◽  
Vol 192 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Michitoshe Ohnishi ◽  
Yukinori Kuwano
Keyword(s):  
Solar Cell ◽  
Output Power ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Module Structure ◽  
High Quality ◽  
Single Junction ◽  
Si Solar Cell ◽  
New Type

ABSTRACTA total area conversion efficiency of 10.2% has been achieved for a 1Ocm×1Ocm integrated-type single-junction amorphous silicon (a-Si) solar cell submodule. It is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2, including multi-junction cells. The effective area conversion efficiency is as high as 11.3%. The high efficiency is obtained by improving the quality of the i-layer and the p/i buffer layer, as well as by utilizing a highly textured, high-quality transparent electrode. The quality of the i-layer plays a dominant role in the performance of a-Si solar cells, especially in high efficiency cells. Techniques that control the properties of the high-quality a-Si films for the i-layer are described. Electric conductivity, ESR spin density and the Raman spectra of high-quality a-Si:H films are investigated as well as their thickness-dependence and substrate-dependence.A Through-Hole Contact (THC) integrated-type submodule has been developed as a new-type a-Si solar cell module structure. Numerical simulations on the output power of the structure show that the output power can be significantly improved by the THC structure.

Properties of Sputtered-n-nc-Si:Er/p-Si Heterojunction Solar Cells

2015 ◽  
Vol 734 ◽  
pp. 791-795
Author(s):  
Guang Wei Wang ◽  
Sheng Li Lu ◽  
Xin Wei Zhao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Heterojunction Solar Cells ◽  
Si Solar Cell ◽  
Heterojunction Diodes ◽  
Photoelectrical Conversion Efficiency

Nanocrystalline Si:Er (nc-Si:Er) films were sputtered on p-Si (100) substrates and diffused with phosphorus to form PN heterojunction diodes. The I-V properties of these diodes were characterized. And the properties of diodes without Er were compared with n-nc-Si:Er/p-Si. It was found that n-nc-Si:Er/p-Si diodes had better characteristics. Solar cells based on n-nc-Si:Er/i-nc-Si/p-Si were fabricated and characterized. The photoelectrical conversion efficiency of 18.13% for n-nc-Si:Er/i-nc-Si/p-Si solar cell was achieved.

High quality sustainable Cu2ZnSnSe4 (CZTSe) absorber layers in highly efficient CZTSe solar cells

2017 ◽  
Vol 19 (3) ◽  
pp. 795-802 ◽  
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Ling Wei ◽  
Shou-Yi Kuo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Environmentally Benign ◽  
High Quality ◽  
Highly Efficient

An evaporation-processed Cu2ZnSnSe4 thin film solar cell with a conversion efficiency of 7.18% was facilely fabricated in an environmentally benign selenium atmosphere.

scholarly journals Hybrid(Luminescent and Fresnel ) Concentrators to Improve Solar Panel Conversion Efficiency

2011 ◽  
Vol 8 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Silicon Solar Cells ◽  
The Sun ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell ◽  
Irradiance Spectrum

The spectral response of the Si solar cell does not coincidence with the sun irradiance spectrum, so the efficiency of the Si solar cell is not high. To improve the Si solar cell one try to make use of most region of the sun spectrum by using dyes which absorb un useful wavelengths and radiate at useful region of spectrum (by stock shift). Fluorescence's dye is used as luminescent concentrator to increase the efficiency of the solar cell. The results show that the performance efficiency and out power for crystalline silicon solar cells are improved.

Stability of Amorphous Silicon Solar Cells — New Tandem a-SiC/a-Si Solar Cell

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Tawada ◽  
J. Takada ◽  
M. Yamaguchi ◽  
H. Yamagishi ◽  
Y. Hosokawa ◽  
...  
Keyword(s):  
Solar Cell ◽  
Light Exposure ◽  
Type A ◽  
Metal Electrode ◽  
Back Side ◽  
Blocking Layer ◽  
Exposure Test ◽  
Si Solar Cell ◽  
Instability Modes ◽  
P Type

ABSTRACTBasic technologies for solving problems in thermal and light-induced degradation have been developed. The tandem type a-SiC/a-Si solar cell with blocking layers exhibits excellent stability for both thermal and sun light conditions. An observable light-induced degradation is not seen in the cell performance after light exposure test of 2000 hours. Two instability modes, that is, thermal and light-induced degradation have been investigated. For thermal degradation, a blocking layer for preventing diffusion has been inserted between the back side metal electrode and a n-layer and another blocking layer has been introduced between the np tunnel junction. To prevent light-induced degradation, p-type a-SiC layer of the pin structure on the side of a glass substrate/SnO2 has been deposited at the temperature of 70°C. The highest efficiency is 9.0% at the present stage, but it is expected to be improved to more than 10%.

Sign in / Sign up

Export Citation Format

Share Document