New crystal family of GaNGeC quaternary compound including direct band gap semiconductors and topological Weyl semimetals

Materials Advances ◽

10.1039/d0ma00844c ◽

2021 ◽

Author(s):

Ping Lou ◽

Jin Yong Lee

Keyword(s):

Particle Swarm Optimization ◽

Band Gap ◽

Crystal Structures ◽

Quaternary Compound ◽

Swarm Optimization ◽

Direct Band Gap ◽

Quaternary Compounds ◽

Weyl Semimetals ◽

Direct Band ◽

Stable Structures

Predicting the crystal structures of novel quaternary compounds can be challenging, as there are only a few stable structures among numerous possible ones. Using a recently developed particle swarm optimization-based...

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Graphene-like quaternary compound SiBCN: A new wide direct band gap semiconductor predicted by a first-principles study

EPL (Europhysics Letters) ◽

10.1209/0295-5075/118/17002 ◽

2017 ◽

Vol 118 (1) ◽

pp. 17002 ◽

Cited By ~ 2

Author(s):

Yan Qian ◽

Haiping Wu ◽

Erjun Kan ◽

Kaiming Deng

Keyword(s):

Band Gap ◽

First Principles ◽

Quaternary Compound ◽

Direct Band Gap ◽

First Principles Study ◽

Direct Band

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Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn

10.21236/ada558773 ◽

2012 ◽

Author(s):

Hung Hsiang Cheng

Keyword(s):

Band Gap ◽

Group Iv ◽

Direct Band Gap ◽

Group Iv Semiconductors ◽

Direct Band

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Analysis of Direct Band Gap A2ScInI6 (A=Rb, Cs) Double Perovskite Halides Using DFT Approach for Renewable Energy Devices

Journal of Materials Research and Technology ◽

10.1016/j.jmrt.2021.05.080 ◽

2021 ◽

Author(s):

N.A. Noor ◽

M. Waqas Iqbal ◽

Taharh Zelai ◽

Asif Mahmood ◽

H.M. Shaikh ◽

...

Keyword(s):

Renewable Energy ◽

Band Gap ◽

Double Perovskite ◽

Energy Devices ◽

Direct Band Gap ◽

Direct Band

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Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.527 ◽

2013 ◽

Vol 652-654 ◽

pp. 527-531 ◽

Cited By ~ 1

Author(s):

A.N. Alias ◽

T.I. Tunku Kudin ◽

Z.M. Zabidi ◽

M.K. Harun ◽

Ab Malik Marwan Ali ◽

...

Keyword(s):

Band Gap ◽

Urbach Energy ◽

Quartz Substrate ◽

Optical Studies ◽

Direct Band Gap ◽

Mott Model ◽

Blended Polymer ◽

Electronic Parameters ◽

Direct Band ◽

Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

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Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate

Journal of Applied Physics ◽

10.1063/1.4859599 ◽

2014 ◽

Vol 115 (1) ◽

pp. 013502 ◽

Cited By ~ 5

Author(s):

R. Aluguri ◽

S. Manna ◽

S. K. Ray

Keyword(s):

Band Gap ◽

Optical Emission ◽

Direct Band Gap ◽

Direct Band

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Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

Journal of Electronic Materials ◽

10.1007/s11664-014-3424-7 ◽

2014 ◽

Vol 44 (1) ◽

pp. 167-176 ◽

Cited By ~ 3

Author(s):

Adit Ghosh ◽

Chandrika Varadachari

Keyword(s):

Band Gap ◽

Direct Band Gap ◽

Direct Band

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Design of direct band gap type I GeSn/Ge quantum dots for mid-IR light emitters on Si substrate

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700047 ◽

2017 ◽

Vol 11 (5) ◽

pp. 1700047 ◽

Cited By ~ 6

Author(s):

Bouraoui Ilahi

Keyword(s):

Quantum Dots ◽

Band Gap ◽

Type I ◽

Si Substrate ◽

Light Emitters ◽

Direct Band Gap ◽

Direct Band ◽

Ge Quantum Dots ◽

Ir Light

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Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

Angewandte Chemie International Edition ◽

10.1002/anie.201411246 ◽

2015 ◽

Vol 54 (10) ◽

pp. 3112-3115 ◽

Cited By ~ 803

Author(s):

Shengli Zhang ◽

Zhong Yan ◽

Yafei Li ◽

Zhongfang Chen ◽

Haibo Zeng

Keyword(s):

Band Gap ◽

Direct Band Gap ◽

Direct Band

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Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽

10.1039/c5ra16877e ◽

2015 ◽

Vol 5 (102) ◽

pp. 83876-83879 ◽

Cited By ~ 23

Author(s):

Chengyong Xu ◽

Paul A. Brown ◽

Kevin L. Shuford

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Plane Strain ◽

Material Properties ◽

First Principles ◽

Tensile Strain ◽

First Principles Calculations ◽

Direct Band Gap ◽

Direct Band ◽

Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

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