scholarly journals Structural rigidity accelerates quantum decoherence and extends carrier lifetime in porphyrin nanoballs: a time domain atomistic simulation

2020 ◽  
Vol 2 (4) ◽  
pp. 1502-1511
Author(s):  
Ritabrata Sarkar ◽  
Md Habib ◽  
Moumita Kar ◽  
Anup Pramanik ◽  
Sougata Pal ◽  
...  
Keyword(s):  
Time Domain ◽  
Atomistic Simulation ◽  
Quantum Coherence ◽  
Carrier Lifetime ◽  
Quantum Decoherence ◽  
Phonon Coupling ◽  
Electron Hole ◽  
Structural Rigidity ◽  
Electron Phonon Coupling ◽  
Hole Recombination

Structural rigidity assists to weaken the NA electron–phonon coupling, shorten the quantum coherence and thus suppress the dynamics of electron–hole recombination.

Suppressing photoexcited electron–hole recombination in MoSe2/WSe2 lateral heterostructures via interface-coupled state engineering: a time-domain ab initio study

2020 ◽  
Vol 8 (39) ◽  
pp. 20621-20628
Author(s):  
Zhaobo Zhou ◽  
Yehui Zhang ◽  
Xiwen Zhang ◽  
Xianghong Niu ◽  
Guangfen Wu ◽  
...  
Keyword(s):  
Time Domain ◽  
Carrier Lifetime ◽  
Vital Role ◽  
Two Dimensional ◽  
Ab Initio Study ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Photoexcited Carrier ◽  
Hole Recombination ◽  
Lateral Heterostructure

Interface-coupled states play a vital role in photoexcited carrier lifetime of two-dimensional lateral heterostructure-based photovoltaic and photoelectric devices.

Unraveling the quantum dynamics origin of high photocatalytic activity in nitrogen-doped anatase TiO2: time-domain ab initio analysis

2020 ◽  
Vol 8 (47) ◽  
pp. 25235-25244
Author(s):  
Yating Yang ◽  
Zhaosheng Zhang ◽  
Wei-Hai Fang ◽  
Sebastian Fernandez-Alberti ◽  
Run Long
Keyword(s):  
Photocatalytic Activity ◽  
Ab Initio ◽  
Time Domain ◽  
Quantum Dynamics ◽  
High Photocatalytic Activity ◽  
Anatase Tio2 ◽  
Electron Hole ◽  
Nitrogen Doped ◽  
Hole Recombination

TiO2 doping with nitrogen greatly suppresses nonradiative electron-hole recombination and enhances photocatalytic activity.

scholarly journals Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

2D Materials ◽  
2016 ◽  
Vol 3 (1) ◽  
pp. 015008 ◽  
Author(s):  
Biswanath Chakraborty ◽  
Satyendra Nath Gupta ◽  
Anjali Singh ◽  
Manabendra Kuiri ◽  
Chandan Kumar ◽  
...  
Keyword(s):  
Phonon Coupling ◽  
Electron Hole ◽  
Electron Phonon Coupling

The anchored location of CdS on SiC via organosilane for effective heterogeneous interface design in photocatalysis

2019 ◽  
Vol 9 (8) ◽  
pp. 906-913
Author(s):  
Yuan Peng ◽  
Jingjing Yang ◽  
Taiping Xie ◽  
Zhenyu Li ◽  
Wenbing Shi
Keyword(s):  
Interface Design ◽  
Carrier Lifetime ◽  
The Other ◽  
Periodic Lattice ◽  
Electron Hole ◽  
Lattice Distribution ◽  
New Approach ◽  
Uniform Interface ◽  
Charge Carrier Lifetime ◽  
Hole Recombination

This work demonstrates a new approach to construct a heterogeneous junction by means of the periodic lattice distribution of semiconductor atoms. The organosilane was applied as an anchored coupling agent to connect the semiconductors at both ends, one of which connects SiC and the other connects CdS, and the SiC/M/CdS heterogeneous junction was established. The photocatalytic hydrogen evolution ability of this heterojunction was three times as much as the traditional SiC/CdS composite under visible light. Meanwhile, the uniform interface distribution, prolonged charge-carrier lifetime and minor electron–hole recombination were achieved. The results provide new insights into interface design and offer an indepth understanding with respect to organic–inorganic heterojunction configuration in photocatalysis.

Weak temperature-dependent hole injection and electron–hole recombination at the CH3NH3PbI3/NiO heterojunction: a time-domain ab initio study

2020 ◽  
Vol 8 (2) ◽  
pp. 607-615 ◽  
Author(s):  
Jinlu He ◽  
Wei-Hai Fang ◽  
Run Long
Keyword(s):  
Charge Carrier ◽  
Ab Initio ◽  
Time Domain ◽  
Carrier Dynamics ◽  
Hole Injection ◽  
Ab Initio Study ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Charge Carrier Dynamics ◽  
Hole Recombination

Weak temperature-dependent photoexcitation charge carrier dynamics in the CH3NH3PbI3/NiO heterojunction.

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