The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing

Nanoscale ◽  
2020 ◽  
Vol 12 (26) ◽  
pp. 14120-14134 ◽  
Author(s):  
Haider Abbas ◽  
Yawar Abbas ◽  
Gul Hassan ◽  
Andrey Sergeevich Sokolov ◽  
Yu-Rim Jeon ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Neuromorphic Computing ◽  
Memory Switching ◽  
Switching Characteristics

Coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing.

scholarly journals A ZnTe Thin Film Memory Device

1980 ◽  
Vol 7 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Sandwich Structure ◽  
Memory Device ◽  
Memory Switching ◽  
Frenkel Emission ◽  
Switching Characteristics

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.

Energy-efficient single-flux-quantum based neuromorphic computing

2017 ◽  
Author(s):  
Michael L. Schneider ◽  
Christine A. Donnelly ◽  
Stephen E. Russek ◽  
Burm Baek ◽  
Matthew R. Pufall ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Flux Quantum ◽  
Neuromorphic Computing

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

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