scholarly journals A ZnTe Thin Film Memory Device

1980 ◽  
Vol 7 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Sandwich Structure ◽  
Memory Device ◽  
Memory Switching ◽  
Frenkel Emission ◽  
Switching Characteristics

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.

Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer

2013 ◽  
Vol 788 ◽  
pp. 159-163 ◽  
Author(s):  
Yu Ru He ◽  
Pei Bang Dai ◽  
Ji Wen Xu ◽  
Yue Qun Lu ◽  
Hua Wang
Keyword(s):  
Sandwich Structure ◽  
Memory Device ◽  
Current Ratio ◽  
Ethyl Methacrylate ◽  
Ag Electrode ◽  
Ito Electrode ◽  
Film Forming ◽  
Switching Characteristics ◽  
Memory Characteristics ◽  
Switching Threshold Voltage

The Ethyl Methacrylate (EMA)/N, N-4, 4-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by the conventional free radical polymerization. The resulting copolymer was fully characterized by FTIR, TG, DSC and the film exhibited excellent film-forming property, high thermal and dimensional stability. The devices based on EMA/ BMI copolymer possess a sandwich structure comprising bottom indiumtin oxide (ITO) electrode and top Ag electrode. The as-fabricated device exhibits the nonvolatile rewritable flash type memory characteristics. The ITO/(EMA/BMI copolymer)/Ag memory device also demonstrates ON/OFF-current ratio of about 1 × 102 and lower switching threshold voltage of about 0.98V.

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

scholarly journals DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. S. Hossain ◽  
R. Islam ◽  
K. A. Khan
Keyword(s):  
Atmospheric Pressure ◽  
Memory Device ◽  
Negative Resistance ◽  
Metal Electrodes ◽  
Metal Insulator ◽  
Memory Switching ◽  
Circulation Current ◽  
Metal Insulator Metal ◽  
Switching Characteristics ◽  
Beam Deposition

Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

Electrical Conduction in Thin Film Carbons.

1987 ◽  
Author(s):  
K. Sugihara ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Film ◽  
Electrical Conduction

Organic-inorganic hybrid thin film light-emitting devices: interfacial engineering and device physics

2021 ◽  
Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Sandwich Structure ◽  
Device Physics ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interfacial Engineering ◽  
Organic Light

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...

scholarly journals Tunable Perfect THz Absorber Based on a Stretchable Ultrathin Carbon-Polymer Bilayer

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 143 ◽  
Author(s):  
Alesia Paddubskaya ◽  
Marina Demidenko ◽  
Konstantin Batrakov ◽  
Gintaras Valušis ◽  
Tommi Kaplas ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Film ◽  
Sandwich Structure ◽  
Thick Layer ◽  
Pyrolytic Carbon ◽  
Thz Radiation ◽  
Pdms Film ◽  
Absorption Resonance ◽  
Screen Approach ◽  
Polymer Thickness

By exploring the Salisbury screen approach, we propose and demonstrate a thin film absorber of terahertz (THz) radiation. The absorber is comprised of a less than 100 nm thick layer of pyrolytic carbon deposited on a stretchable polydimethylsiloxane (PDMS) film followed by the metal film. We demonstrate that being overall less than 200 microns thick, such a sandwich structure absorbs resonantly up to 99.9%of the incident THz radiation, and that the absorption resonance is determined by the polymer thickness, which can be adjusted by stretching.

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