scholarly journals Bouncing off walls – widths of exit channels from shallow minima can dominate selectivity control

2020 ◽  
Vol 11 (36) ◽  
pp. 9937-9944
Author(s):  
Mengna Bai ◽  
Zhitao Feng ◽  
Jun Li ◽  
Dean J. Tantillo

A selectivity model based on the widths of pathways to competing products, rather than barrier heights, is formulated for the butadiene + allyl cation reaction.

2011 ◽  
Vol 679-680 ◽  
pp. 571-574 ◽  
Author(s):  
Bernd Zippelius ◽  
Michael Krieger ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Hiroyuki Nagasawa ◽  
...  

The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.


2020 ◽  
Vol 43 ◽  
Author(s):  
Peter Dayan

Abstract Bayesian decision theory provides a simple formal elucidation of some of the ways that representation and representational abstraction are involved with, and exploit, both prediction and its rather distant cousin, predictive coding. Both model-free and model-based methods are involved.


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


2001 ◽  
Vol 7 (S2) ◽  
pp. 578-579
Author(s):  
David W. Knowles ◽  
Sophie A. Lelièvre ◽  
Carlos Ortiz de Solόrzano ◽  
Stephen J. Lockett ◽  
Mina J. Bissell ◽  
...  

The extracellular matrix (ECM) plays a critical role in directing cell behaviour and morphogenesis by regulating gene expression and nuclear organization. Using non-malignant (S1) human mammary epithelial cells (HMECs), it was previously shown that ECM-induced morphogenesis is accompanied by the redistribution of nuclear mitotic apparatus (NuMA) protein from a diffuse pattern in proliferating cells, to a multi-focal pattern as HMECs growth arrested and completed morphogenesis . A process taking 10 to 14 days.To further investigate the link between NuMA distribution and the growth stage of HMECs, we have investigated the distribution of NuMA in non-malignant S1 cells and their malignant, T4, counter-part using a novel model-based image analysis technique. This technique, based on a multi-scale Gaussian blur analysis (Figure 1), quantifies the size of punctate features in an image. Cells were cultured in the presence and absence of a reconstituted basement membrane (rBM) and imaged in 3D using confocal microscopy, for fluorescently labeled monoclonal antibodies to NuMA (fαNuMA) and fluorescently labeled total DNA.


Author(s):  
Charles Bouveyron ◽  
Gilles Celeux ◽  
T. Brendan Murphy ◽  
Adrian E. Raftery

Author(s):  
Jonathan Jacky ◽  
Margus Veanes ◽  
Colin Campbell ◽  
Wolfram Schulte
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document