Highly selective carrier-type modulation of tungsten selenide transistors using iodine vapor

2020 ◽  
Vol 8 (13) ◽  
pp. 4365-4371 ◽  
Author(s):  
Shuangqing Fan ◽  
Minghui Cao ◽  
Jing Liu ◽  
Jiajia Liu ◽  
Jie Su

A novel band-matched doping strategy was introduced in highly selective doping of WSe2 without affecting other TMDCs.

2021 ◽  
Vol 7 (5) ◽  
pp. 350
Author(s):  
Taisuke Seike ◽  
Natsue Sakata ◽  
Fumio Matsuda ◽  
Chikara Furusawa

The fission yeast Schizosaccharomyces japonicus, comprising S. japonicus var. japonicus and S. japonicus var. versatilis varieties, has unique characteristics such as striking hyphal growth not seen in other Schizosaccharomyces species; however, information on its diversity and evolution, in particular mating and sporulation, remains limited. Here we compared the growth and mating phenotypes of 17 wild strains of S. japonicus, including eight S. japonicus var. japonicus strains newly isolated from an insect (Drosophila). Unlike existing wild strains isolated from fruits/plants, the strains isolated from Drosophila sporulated at high frequency even under nitrogen-abundant conditions. In addition, one of the strains from Drosophila was stained by iodine vapor, although the type strain of S. japonicus var. japonicus is not stained. Sequence analysis further showed that the nucleotide and amino acid sequences of pheromone-related genes have diversified among the eight strains from Drosophila, suggesting crossing between S. japonicus cells of different genetic backgrounds occurs frequently in this insect. Much of yeast ecology remains unclear, but our findings suggest that insects such as Drosophila might be a good niche for mating and sporulation, and will provide a basis for the understanding of sporulation mechanisms via signal transduction, as well as the ecology and evolution of yeast.


1964 ◽  
Vol 5 (3) ◽  
pp. 486
Author(s):  
Takashi Negishi ◽  
Mary E. McKillican ◽  
Marius Lepace
Keyword(s):  

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.


2007 ◽  
Vol 33 (10) ◽  
pp. 869-871 ◽  
Author(s):  
V. V. Vainberg ◽  
Yu. N. Gudenko ◽  
V. N. Poroshin ◽  
V. N. Tulupenko ◽  
N. N. Cheng ◽  
...  

1993 ◽  
Vol 22 (5) ◽  
pp. 463-466 ◽  
Author(s):  
Ziqiang Zhu ◽  
Takafumi Yao ◽  
Hiroshi Mori

2006 ◽  
Vol 40 (6) ◽  
pp. 662-664 ◽  
Author(s):  
A. E. Gamarts ◽  
V. A. Moshnikov ◽  
D. B. Chesnokova
Keyword(s):  

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