GaAs wafers possessing facet-dependent electrical conductivity properties

2020 ◽  
Vol 8 (16) ◽  
pp. 5456-5460 ◽  
Author(s):  
Pei-Lun Hsieh ◽  
Shi-Hong Wu ◽  
Ting-Yu Liang ◽  
Lih-Juann Chen ◽  
Michael H. Huang
Keyword(s):  
Electrical Conductivity ◽  
Gaas Wafer

Current-rectifying I–V curves have been recorded for {110}/{111} facet combination of a GaAs wafer, suggesting the fabrication of facet-controlled transistors.

Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1111-1114 ◽  
Author(s):  
Mattias Hammar ◽  
Frank Wennekes ◽  
Fredrik Salomonsson ◽  
Jonas Bentell ◽  
Klaus Streubel ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Gaas Wafer

Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

2013 ◽  
Vol 113 (20) ◽  
pp. 203512 ◽  
Author(s):  
S. Essig ◽  
O. Moutanabbir ◽  
A. Wekkeli ◽  
H. Nahme ◽  
E. Oliva ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Wafer Bonding ◽  
Atom Beam ◽  
Gaas Wafer ◽  
Fast Atom Beam

Effects of Miscut Substrates on Electrical Conductivity Across InP and GaAs Wafer-Bonded Structures

2014 ◽  
Vol 64 (5) ◽  
pp. 225-233
Author(s):  
J. McKay ◽  
M. Seal ◽  
K. Yeung ◽  
M. Jackson ◽  
M. S. Goorsky
Keyword(s):  
Electrical Conductivity ◽  
Gaas Wafer

Removing Substrate Background in TEM Microanalysis

1974 ◽  
Vol 32 ◽  
pp. 568-569
Author(s):  
John C. Russ ◽  
Nicholas C. Barbi
Keyword(s):  
Electrical Conductivity ◽  
Rapid Growth ◽  
Organic Film ◽  
Absolute Concentration ◽  
Background Signal ◽  
X Ray ◽  
Elemental Concentrations ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
The Continuum

The rapid growth of interest in attaching energy-dispersive x-ray analysis systems to transmission electron microscopes has centered largely on microanalysis of biological specimens. These are frequently either embedded in plastic or supported by an organic film, which is of great importance as regards stability under the beam since it provides thermal and electrical conductivity from the specimen to the grid.Unfortunately, the supporting medium also produces continuum x-radiation or Bremsstrahlung, which is added to the x-ray spectrum from the sample. It is not difficult to separate the characteristic peaks from the elements in the specimen from the total continuum background, but sometimes it is also necessary to separate the continuum due to the sample from that due to the support. For instance, it is possible to compute relative elemental concentrations in the sample, without standards, based on the relative net characteristic elemental intensities without regard to background; but to calculate absolute concentration, it is necessary to use the background signal itself as a measure of the total excited specimen mass.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

Total Body Electrical Conductivity Measurements in the Neonate

1991 ◽  
Vol 18 (3) ◽  
pp. 611-627 ◽  
Author(s):  
Marta L. Fiorotto ◽  
William J. Klish
Keyword(s):  
Electrical Conductivity ◽  
Conductivity Measurements ◽  
Total Body
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