Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

2013 ◽  
Vol 113 (20) ◽  
pp. 203512 ◽  
Author(s):  
S. Essig ◽  
O. Moutanabbir ◽  
A. Wekkeli ◽  
H. Nahme ◽  
E. Oliva ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Wafer Bonding ◽  
Atom Beam ◽  
Gaas Wafer ◽  
Fast Atom Beam

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Laser-Sustained Plasma in a Sonic Nozzle Probed by Fast Atom Beam

2007 ◽  
Vol 21 (4) ◽  
pp. 763-771 ◽  
Author(s):  
K. Amic ◽  
A. Lebéhot ◽  
J. D. Parisse
Keyword(s):  
Atom Beam ◽  
Sonic Nozzle ◽  
Fast Atom Beam

Fast atom beam bombardment secondary ion mass spectrometry: FAB-SIMS

1993 ◽  
Vol 70-71 ◽  
pp. 287-290 ◽  
Author(s):  
Hideaki Hayashi ◽  
Tohru Satake ◽  
Kazuhiko Kaneko ◽  
Kazutosi Nagai
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Atom Beam ◽  
Ion Mass Spectrometry ◽  
Fast Atom Beam ◽  
Secondary Ion

High-temperature healing of interfacial voids in GaAs wafer bonding

2002 ◽  
Vol 91 (4) ◽  
pp. 1973-1977 ◽  
Author(s):  
YewChung Sermon Wu ◽  
Po Chun Liu ◽  
R. S. Feigelson ◽  
R. K. Route
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer

scholarly journals Freestanding HfO2 grating fabricated by fast atom beam etching

2011 ◽  
Vol 6 (1) ◽  
Author(s):  
Yongjin Wang ◽  
Tong Wu ◽  
Yoshiaki Kanamori ◽  
Kazuhiro Hane
Keyword(s):  
Atom Beam ◽  
Fast Atom Beam ◽  
Fast Atom Beam Etching
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