Enriching the branching of Au@PdAu core–shell nanocrystals using a syringe pump: kinetics control meets lattice mismatch

CrystEngComm ◽  
2021 ◽  
Vol 23 (13) ◽  
pp. 2582-2589
Author(s):  
Gongguo Zhang ◽  
Yanyun Ma ◽  
Xiaowei Fu ◽  
Wenjun Zhao ◽  
Feng Liu ◽  
...  

Gold@palladium–gold nanocrystals with a tunable branched shape are prepared via seeded growth, where the use of a syringe pump allows the manipulation over reaction kinetics as coupled by surface diffusion and strain caused by lattice mismatch.

2021 ◽  
Vol 27 ◽  
pp. 102377
Author(s):  
Gongguo Zhang ◽  
Mengfan Li ◽  
Hongwen Huang ◽  
Yiqun Zheng

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.


2020 ◽  
Vol 2 (3) ◽  
pp. 1105-1114 ◽  
Author(s):  
Jocelyn T. L. Gamler ◽  
Alberto Leonardi ◽  
Xiahan Sang ◽  
Kallum M. Koczkur ◽  
Raymond R. Unocic ◽  
...  

Bimetallic nanocrystals with core@shell architectures are versatile particles. Geometric phase analysis of TEM images and atomistic simulations are coupled to reveal the lattice relaxation as a function of lattice mismatch and shell thickness.


CrystEngComm ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 173-177
Author(s):  
Qiang Zhang ◽  
Li Long ◽  
Gongguo Zhang ◽  
Zhi-Yuan Li ◽  
Yiqun Zheng

Silver nanoplates with rough edges have been successfully fabricated via seeded growth by manipulating surface diffusion and kinetics-controlled growth.


2018 ◽  
Vol 54 (49) ◽  
pp. 6300-6303 ◽  
Author(s):  
Chao Jia ◽  
Hui Li ◽  
Xianwei Meng ◽  
Hongbo Li

The synthesis of 3D/0D core/shell lead halide perovskite nanocrystals has been realized using the seeded growth approach for the first time.


2020 ◽  
Vol 2020 (31) ◽  
pp. 2941-2941
Author(s):  
Gongguo Zhang ◽  
Xiaowei Fu ◽  
Xiaoqian Luan ◽  
Xiurong Zhai ◽  
Fengli Qu ◽  
...  

2003 ◽  
Vol 776 ◽  
Author(s):  
Hung-Min Lin ◽  
Jian Yang ◽  
Yong-Lin Chen ◽  
Yau-Chung Liu ◽  
Kai-Min Yin ◽  
...  

AbstractHigh-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.


CrystEngComm ◽  
2017 ◽  
Vol 19 (2) ◽  
pp. 318-324 ◽  
Author(s):  
Yijing Li ◽  
Peina Zhang ◽  
Junling Duan ◽  
Shiyun Ai ◽  
Houshen Li

2010 ◽  
Vol 114 (18) ◽  
pp. 8212-8218 ◽  
Author(s):  
Weesiong Chiu ◽  
Poisim Khiew ◽  
Michael Cloke ◽  
Dino Isa ◽  
Hongngee Lim ◽  
...  

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