In-situ observation of atomic processes in Xe nanocrystals embedded in al

1997 ◽  
Vol 504 ◽  
Author(s):  
K. Mitsuishi ◽  
M. Song ◽  
K. Furuya ◽  
R. C. Birtcher ◽  
C. W. Allen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Stacking Fault ◽  
Self Organization ◽  
In Situ Observation ◽  
Layer By Layer ◽  
Atomic Processes ◽  
Fault Type ◽  
Resolution Electron

ABSTRACTSelf-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

High Resolution Electron Microscopy In Situ Observation of Dynamic Behavior of Grain Boundaries and Interfaces at Very High Temperatures

1997 ◽  
Vol 3 (5) ◽  
pp. 393-408 ◽  
Author(s):  
T. Kamino ◽  
K. Sasaki ◽  
H. Saka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Dynamic Behavior ◽  
High Temperatures ◽  
High Resolution Electron Microscopy ◽  
In Situ Observation ◽  
Resolution Electron ◽  
Very High

High Resolution Electron Microscopy In Situ Observation of Dynamic Behavior of Grain Boundaries and Interfaces at Very High Temperatures

High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

1993 ◽  
Vol 8 (9) ◽  
pp. 2112-2127 ◽  
Author(s):  
A. Bardal ◽  
O. Eibl ◽  
Th. Matthée ◽  
G. Friedl ◽  
J. Wecker
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Thick Layer ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Stacking Fault ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
Unit Cells

The microstructures of YBa2Cu3O7−δ (YBCO) thin films grown on Si with Y-stabilized ZrO2 (YSZ) and Y2O3 buffer layers were characterized by means of high-resolution electron microscopy. At the Si–YSZ interface, a 2.5 nm thick layer of regrown amorphous SiOx is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si–YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ–Y2O3 interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2〈110〉 are present at this interface along with unrelaxed elastic misfit stresses. The Y2O3–YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y2O3 was found to be a barium-oxygen layer.

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