scholarly journals Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 402
Author(s):  
Fan Liao ◽  
Yan Zhao ◽  
Ziyun Chen ◽  
Yanqing Zheng ◽  
Hongbing Chen
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Direct Current ◽  
Optical Transmittance ◽  
Alternating Current ◽  
Nominal Composition ◽  
Structure Changes ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Ferroelectric Single Crystal

A relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm0.5Nb0.5)O3-(0.7‒x) Pb(Mg1/3Nb1/3)O3-0.3PbTiO3 (x = 0.01, 0.02, and 0.03) was grown by the vertical Bridgman process. The electrical properties and the ferroelectric domains, as well as the luminescent characteristics of the single crystals, were investigated systematically. The piezoelectric coefficient d33 of the single crystals are slightly higher than that of the undoped PMN-PT single crystal under direct current polarization, while the crystal wafers gain a much higher d33 value upon being polarized with alternating current voltage. The single crystals possess a decreased phase transition temperature of around 60 °C and a decreased Curie temperature of 92~116 °C compared with the undoped PMN-PT single crystal. The crystal wafers polarized with alternating current voltage exhibited a desirable optical transmittance, which is associated with the domain structure changes inside the crystal medium. The domain density of the crystal wafers under alternating current polarization was significantly decreased compared with the direct current polarized crystal wafers. The luminescent spectra of the crystal wafers exhibit the typical emission peaks corresponding to the characteristic transition of Sm3+ ions in the crystal lattice.

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

Bridgman growth and electrical properties of Nd-doped PMN-PT single crystal with ultrahigh piezoelectricity

CrystEngComm ◽  
2022 ◽  
Author(s):  
Ziyun Chen ◽  
Tingyu Deng ◽  
Rui Chen ◽  
Di Lin ◽  
Wenning Di ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Crystalline Phase ◽  
Perovskite Structure ◽  
Polycrystalline Material ◽  
Nominal Composition ◽  
Bridgman Growth ◽  
Vertical Bridgman ◽  
Bridgman Process

Using the polycrystalline material with a nominal composition of Nd0.01Pb0.985[(Mg1/3Nb2/3)0.70Ti0.30]O3, a Nd-doped PMN-PT single crystal has been grown successfully by vertical Bridgman process. The perovskite structure and the crystalline phase...

Characterisation of Defects in ZnO Implanted by Hydrogen

2015 ◽  
Vol 365 ◽  
pp. 49-54
Author(s):  
Ivan Procházka ◽  
Jakub Čížek ◽  
Jan Valenta ◽  
Vladimír Havránek ◽  
Petr Hruška ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Positron Annihilation ◽  
Optical Activity ◽  
Optical Transmittance ◽  
Hydrogen Impurity ◽  
High Quality ◽  
Positron Annihilation Lifetime ◽  
Zno Single Crystal

In the present work, defects created by implantation of hydrothermally grown ZnO single crystals of high quality with H+ions were investigated by positron annihilation lifetime (LT) spectroscopy combined with measurements of optical transmittance (OT) and photoluminescence (PL). First, zinc vacancies attached with one hydrogen impurity (VZn– 1H) atom were identified in the virgin ZnO single crystal. The ZnO single crystals were then bombarded by H+ions with the energy of 2.5 MeV to the fluence of 1016cm-2. It was found that VZn– VOdivacancies were introduced into ZnO by H+-implantation. Effects of H+-implantation on the optical activity of defects in ZnO lattice are characterised in the light of the present OT and PL data.

The Effective Electromechanical Moduli of Domain Engineered Ferroelectric Crystals

Aerospace ◽  
2003 ◽  
Author(s):  
Jiangyu Li ◽  
Dan Liu
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Electromechanical Coupling ◽  
Fundamental Property ◽  
Homogenization Theory ◽  
Optimal Domain ◽  
Design And Optimization ◽  
Domain Configuration ◽  
Ferroelectric Single Crystal ◽  
Minimization Approach

We present a micromechanical analysis to explain the enhanced electromechanical coupling of domain engineered ferroelectric single crystals. The theory starts with energy-minimization approach, where the energy minimizing domain configurations are characterized as the convex hull of the ferroelectric energy wells, and are constructed by multi-rank laminations. The electromechanical moduli of ferroelectric single crystal with engineered domain configuration can then be determined by the homogenization theory. Using this approach, we analyzed the engineered domain configuration in tetragonal single crystal BaTiO3 poled in <111> direction, where d33 70% higher than those poled in <001> direction has been demonstrated, consistent with experimental observation. It is also found that the two-variant domain configurations have higher enhancement than three-variant systems, suggesting an optimal domain configuration for the enhanced piezoelectric properties. The theory reveals the fundamental property enhancement mechanism in ferroelectric single crystals with engineered domain configuration, and offers insight on the design and optimization of ferroelectric single crystals with superior functional properties.

scholarly journals Cвойства пленок на основе наноразмерных и субмикронных частиц InSb, пассивированных CdS

2020 ◽  
Vol 46 (20) ◽  
pp. 7
Author(s):  
М.И. Шишкин ◽  
Ю.В. Никулин ◽  
Е.С. Прихожденко
Keyword(s):  
Quantum Dots ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Evaporation ◽  
Infrared Region ◽  
Single Crystal Growth ◽  
Current Voltage ◽  
Gallium Gadolinium Garnet ◽  
Current Voltage Characteristics

In the InSb film fabricated by thermal evaporation on the CdS single crystal, growth of reflection in the infrared region similar to plasma resonance in the single crystals has observed. Raman spectra demonstrate that the ratio of amorphous and crystalline phases is approximately constant for InSb films on the CdS substrate, which is not typical for the InSb film on gallium gadolinium garnet. The current – voltage characteristics of the InSb film on CdS as well as the annealed layer of InSb (core)–CdS (shell) quantum dots are linear and become sensitive to illumination.

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