Bridgman growth, crystallographic characterization and electrical properties of relaxor-based ferroelectric single crystal PIMNT

2012 ◽  
Vol 518 ◽  
pp. 63-67 ◽  
Author(s):  
Hongbing Chen ◽  
Zhe Liang ◽  
Laihui Luo ◽  
Yiyang Ke ◽  
Qi Shen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Bridgman Growth ◽  
Ferroelectric Single Crystal

Electrical Properties of Pb(Mg1/3Nb2/3)-PbTiO3 Ferroelectric Single Crystal

2009 ◽  
Vol 421-422 ◽  
pp. 419-422
Author(s):  
Ghulam Shabbir ◽  
Seiji Kojima
Keyword(s):  
Phase Transition ◽  
Electrical Properties ◽  
Single Crystal ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Charge Carriers ◽  
Frequency Range ◽  
Thermally Activated ◽  
Phase Transition Temperatures ◽  
Ferroelectric Single Crystal

The electrical properties of [001]-oriented morphotropic phase boundary (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-33%PT) single crystal have investigated as a function of temperature and frequency. The ac-conductivity exhibited continuous dispersion at all temperatures and frequency range examined and was associated to the thermally activated space charge carriers and local off-centering of Ti4+ and Pb2+ ions. The variations in ferroelectric phase transition temperatures observed in the poled state were associated to the polarization fluctuations and phase co-existence.

Bridgman growth and electrical properties of Nd-doped PMN-PT single crystal with ultrahigh piezoelectricity

CrystEngComm ◽  
2022 ◽  
Author(s):  
Ziyun Chen ◽  
Tingyu Deng ◽  
Rui Chen ◽  
Di Lin ◽  
Wenning Di ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Crystalline Phase ◽  
Perovskite Structure ◽  
Polycrystalline Material ◽  
Nominal Composition ◽  
Bridgman Growth ◽  
Vertical Bridgman ◽  
Bridgman Process

Using the polycrystalline material with a nominal composition of Nd0.01Pb0.985[(Mg1/3Nb2/3)0.70Ti0.30]O3, a Nd-doped PMN-PT single crystal has been grown successfully by vertical Bridgman process. The perovskite structure and the crystalline phase...

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

Magnetic and electrical properties of single-crystal La2−xSrxCu1−yNiyO4

2003 ◽  
Vol 388-389 ◽  
pp. 241-242 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Takahiko Masui ◽  
Yutaka Itoh ◽  
Takato Machi ◽  
Isao Kato ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Magnetic And Electrical Properties
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