Excited states of modified oxygen-deficient centers and Si quantum dots in Gd-implanted silica glasses: Emission dynamics and lifetime distributions

2021 ◽  
Author(s):  
Anatoly Zatsepin ◽  
Yulia Kuznetsova ◽  
Elena Trofimova ◽  
Vladimir A Pustovarov
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Excited States ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Silica Glasses ◽  
Pulsed Cathodoluminescence ◽  
Si Quantum Dots

The emission centers and excited states characteristics in silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation,...

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling

Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

2019 ◽  
Vol 21 (45) ◽  
pp. 25467-25473 ◽  
Author(s):  
A. F. Zatsepin ◽  
Yu. A. Kuznetsova ◽  
C. H. Wong
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Amorphous Silica ◽  
Ion Beam ◽  
Silica Matrix ◽  
Radiation Defects ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

Hole Emission from Ge/Si Quantum Dots Studied by Time-Resolved Capacitance Spectroscopy

2001 ◽  
Vol 224 (1) ◽  
pp. 261-264 ◽  
Author(s):  
C.M.A. Kapteyn ◽  
M. Lion ◽  
R. Heitz ◽  
D. Bimberg ◽  
C. Miesner ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Capacitance Spectroscopy ◽  
Si Quantum Dots

Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation

2001 ◽  
Vol 79 (24) ◽  
pp. 4025-4027 ◽  
Author(s):  
P. I. Gaiduk ◽  
A. Nylandsted Larsen ◽  
J. Lundsgaard Hansen ◽  
A. V. Mudryj ◽  
M. P. Samtsov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Self Assembly ◽  
Si Quantum Dots

Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices

2014 ◽  
Vol 434 ◽  
pp. 177-180 ◽  
Author(s):  
Wei Yu ◽  
Huina Feng ◽  
Jin Wang ◽  
Wanlei Dai ◽  
Xiang Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Si Quantum Dots

Controlling Growth of InAs/GaAs Self-Assembled Quantum Dots to Give 1.3 μm Room Temperature Emission

1999 ◽  
Vol 571 ◽  
Author(s):  
Surama Malik ◽  
Philip Siverns ◽  
David Childs ◽  
Christine Roberts ◽  
Jean-Michel Hartmann ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Room Temperature ◽  
Growth Parameters ◽  
High Growth ◽  
Growth Conditions ◽  
Time Resolved ◽  
Confining Potential ◽  
Decay Times ◽  
Self Assembled

ABSTRACTWe have investigated the extent to which the emission wavelength of self-assembled InAs/GaAs quantum dots can be controlled by growth parameters using conventional solid source MBE. Changing from conventionally high growth rates to a very low growth rate (LGR) and a relatively high substrate temperature, tunes the photoluminescence (PL) emission from 1.1 μm to 1.3 μm at room temperature. Atomic force micrographs obtained from uncapped samples reveal that these LGRQDs are larger, lower in density and extremely uniform in size. The improved size uniformity is reflected in the reduction of the PL linewidth from 78 meV to 22 meV. Under conditions of high excitation, emission from the ground and two excited states each separated by ∼70 meV is observed. This implies a parabolic confining potential. Time resolved photoluminescence (TRPL) measurements of dots grown under the various growth conditions yield radiative lifetimes which reflect the depth of the confining potential. A comparison of the decay times measured for the excited states show that the relaxation of carriers within the dots cannot be ascribed to phonon effects.

Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2

2011 ◽  
Vol 109 (8) ◽  
pp. 084337 ◽  
Author(s):  
M. Yedji ◽  
J. Demarche ◽  
G. Terwagne ◽  
R. Delamare ◽  
D. Flandre ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Photovoltaic Cells ◽  
Third Generation ◽  
Si Quantum Dots

Solvent Dependence of Structural Dynamics and Spin-flip Processes in 3,4,5-tri(9H-carbazole-9-yl)benzonitrile (ortho-3CzBN)

2020 ◽  
Author(s):  
Masaki Saigo ◽  
Kiyoshi Miyata ◽  
Hajime Nakanotani ◽  
Chihaya Adachi ◽  
Ken Onda
Keyword(s):  
Dft Calculations ◽  
Excited States ◽  
Structural Changes ◽  
Photophysical Properties ◽  
Delayed Fluorescence ◽  
Time Resolved ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated ◽  
Solvent Dependence ◽  
Acetonitrile Solutions

We have investigated the solvent-dependence of structural changes along with intersystem crossing of a thermally activated delayed fluorescence (TADF) molecule, 3,4,5-tri(9H-carbazole-9-yl)benzonitrile (o-3CzBN), in toluene, tetrahydrofuran, and acetonitrile solutions using time-resolved infrared (TR-IR) spectroscopy and DFT calculations. We found that the geometries of the S1 and T1 states are very similar in all solvents though the photophysical properties mostly depend on the solvent. In addition, the time-dependent DFT calculations based on these geometries suggested that the thermally activated delayed fluorescence process of o-3CzBN is governed more by the higher-lying excited states than by the structural changes in the excited states.<br>

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