Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

2019 ◽  
Vol 21 (45) ◽  
pp. 25467-25473 ◽  
Author(s):  
A. F. Zatsepin ◽  
Yu. A. Kuznetsova ◽  
C. H. Wong
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Amorphous Silica ◽  
Ion Beam ◽  
Silica Matrix ◽  
Radiation Defects ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

Photoluminescence of pure silicon quantum dots embedded in an amorphous silica wire array

2017 ◽  
Vol 5 (27) ◽  
pp. 6713-6717 ◽  
Author(s):  
Shunkai Lu ◽  
Bin Wu ◽  
Yuyang Sun ◽  
Yafei Cheng ◽  
Fan Liao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silica ◽  
Thermal Evaporation ◽  
Wire Array ◽  
Silicon Quantum Dots ◽  
Pure Silicon ◽  
Si Quantum Dots

Si quantum dots embedded in an amorphous silica wire array were first synthesized using thermal evaporation.

Excited states of modified oxygen-deficient centers and Si quantum dots in Gd-implanted silica glasses: Emission dynamics and lifetime distributions

2021 ◽  
Author(s):  
Anatoly Zatsepin ◽  
Yulia Kuznetsova ◽  
Elena Trofimova ◽  
Vladimir A Pustovarov
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Excited States ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Silica Glasses ◽  
Pulsed Cathodoluminescence ◽  
Si Quantum Dots

The emission centers and excited states characteristics in silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation,...

Precise size separation of water-soluble red-to-near-infrared-luminescent silicon quantum dots by gel electrophoresis

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 9266-9271
Author(s):  
Minoru Fujii ◽  
Akiko Minami ◽  
Hiroshi Sugimoto
Keyword(s):  
Quantum Dots ◽  
Standard Method ◽  
Gel Electrophoresis ◽  
Near Infrared ◽  
Water Soluble ◽  
Silicon Quantum Dots ◽  
Size Separation ◽  
First Time ◽  
Si Quantum Dots

Gel electrophoresis, which is a standard method for separation and analysis of macromolecules such as DNA, RNA and proteins, is applied for the first time to silicon (Si) quantum dots (QDs) for size separation.

Advance in the Growth of Ordered Ge/Si Quantum Dots

2013 ◽  
Vol 320 ◽  
pp. 168-175
Author(s):  
Hai Peng Wang ◽  
Chong Wang ◽  
Jie Yu ◽  
Jie Yang ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ultra Violet ◽  
Interference Lithography ◽  
Ion Beam Irradiation ◽  
Preparation Methods ◽  
Patterned Substrate ◽  
Si Quantum Dots ◽  
Lithography Technology

Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed. We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation. In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

Assembling silicon quantum dots into wires, networks and rods via metal ion bridges

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7597-7604 ◽  
Author(s):  
Yuki Ohata ◽  
Hiroshi Sugimoto ◽  
Minoru Fujii
Keyword(s):  
Quantum Dots ◽  
Electrical Properties ◽  
Metal Ions ◽  
Metal Ion ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

Wires, networks and rods of Si quantum dots (QDs) are produced by bridging Si QDs with metal ions and the electrical properties are studied.

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation

2001 ◽  
Vol 79 (24) ◽  
pp. 4025-4027 ◽  
Author(s):  
P. I. Gaiduk ◽  
A. Nylandsted Larsen ◽  
J. Lundsgaard Hansen ◽  
A. V. Mudryj ◽  
M. P. Samtsov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Self Assembly ◽  
Si Quantum Dots

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

2012 ◽  
Vol 111 (7) ◽  
pp. 074316 ◽  
Author(s):  
S. R. C. Pinto ◽  
M. Buljan ◽  
A. Chahboun ◽  
M. A. Roldan ◽  
S. Bernstorff ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silica ◽  
Silica Matrix ◽  
Ge Quantum Dots ◽  
Deposition Conditions

scholarly journals Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

2011 ◽  
Vol 60 (9) ◽  
pp. 096101
Author(s):  
Zhang Xue-Gui ◽  
Wang Chong ◽  
Lu Zhi-Quan ◽  
Yang Jie ◽  
Li Liang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Si Quantum Dots

Insight into the effects of surface oxidation and carbonization on the electronic properties of silicon quantum dots and silicon slabs: a density functional study

RSC Advances ◽  
2014 ◽  
Vol 4 (105) ◽  
pp. 60948-60952 ◽  
Author(s):  
Yuheng Zeng ◽  
Liang Chen ◽  
Guoqiang Liu ◽  
Hua Xu ◽  
Weijie Song
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Density Functional ◽  
Surface Oxidation ◽  
Functional Study ◽  
Silicon Quantum Dots ◽  
Carrier Recombination ◽  
Oxygen Oxidation ◽  
Si Quantum Dots ◽  
Insight Into

In this work, we investigated the effects of surface backbond-oxygen oxidation and surface substitute-carbon carbonization on carrier recombination and transportation of 10-, 12- and 14 Å Si quantum dots (QDs).

Sign in / Sign up

Export Citation Format

Share Document