Multiscale Simulation for Exploring Photo-Chemical Processes to Mitigate the Critical Dimension Variability of Contact Hole in EUV Lithography

2021 ◽  
Author(s):  
Sungwoo Park ◽  
Hyungwoo Lee ◽  
Muyoung Kim ◽  
Taegyeom Kim ◽  
Byunghoon Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Extreme Ultraviolet ◽  
Critical Dimension ◽  
Multiscale Simulation ◽  
Chemical Processes ◽  
Production Yield ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Patterned Surface ◽  
Euv Lithography

In extreme ultraviolet lithography (EUVL), non-uniformity of patterned surface roughness of contact holes results in pattern failures such as bridging- or missing holes, which affect production yield. In this study,...

Mask Critical Dimension Specification Considering Process Sensitivity of Mask Error in Extreme Ultraviolet Lithography

2007 ◽  
Vol 46 (9B) ◽  
pp. 6145-6149
Author(s):  
Sungmin Huh ◽  
Hoon Kim ◽  
Ilyong Jang ◽  
Sung-Yong Cho ◽  
Dongwan Kim ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Critical Dimension ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography

scholarly journals Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Andreas Erdmann ◽  
Dongbo Xu ◽  
Peter Evanschitzky ◽  
Vicky Philipsen ◽  
Vu Luong ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Extreme Ultraviolet Lithography ◽  
Imaging Analysis ◽  
Partial Reflection ◽  
Ultraviolet Lithography ◽  
Euv Lithography ◽  
Imaging Artifacts ◽  
Lithographic Masks ◽  
Reflective Systems

AbstractThe reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the mask causes asymmetric shadowing, a size bias between features with different orientations and telecentricity errors. The image contrast varies with the feature orientation and can easily drop far below intuitively expected values. The deformation of the wavefront or phase of the incident light by thick absorbers generates aberration-like effects, especially variations of the best-focus (BF) position vs. the pitch and size of the imaged patterns. Partial reflection of light from the top of the absorber generates a weak secondary image, which superposes with the main image. Based on a discussion of the root causes of these phenomena, we employ mask diffraction and imaging analysis for a quantitative analysis of these effects for standard EUV masks. Simulations for various non-standard types of mask stacks (e.g. etched multilayers, buried shifters, etc.) and for various non-standard absorber materials are used to explore the imaging capabilities of alternative masks for EUV lithography. Finally, an outlook at anamorphic systems for larger numerical apertures is given.

Resist material options for extreme ultraviolet lithography

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Takahiro Kozawa
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
The Past ◽  
Chemically Amplified ◽  
Euv Lithography ◽  
Urgent Task ◽  
Chemically Amplified Resists

AbstractOwing to the worldwide efforts, the development of extreme ultraviolet (EUV) lithography has significantly progressed during the past decade. The resolution of chemically amplified resists has reached sub-16-nm region. From the viewpoint of the extendibility of EUV lithography, the development of resist materials capable of resolving sub-10-nm is an urgent task. In this review, the resist material options for EUV lithography are discussed on the basis of the EUV sensitization mechanisms after reviewing the problems for the sub-10-nm fabrication.

Influence of mask surface roughness on 22nm node extreme ultraviolet lithography

2010 ◽  
Author(s):  
Eun-Jin Kim ◽  
Jee-Hye You ◽  
Seoung-Sue Kim ◽  
Han-Ku Cho ◽  
Jinho Ahn ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography
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