Manipulating the optical and electronic properties of MoO3 films through electric-field-induced ion migration

2021 ◽  
Author(s):  
Xiaoxia Wang ◽  
Fanfan Du ◽  
Yingmei Zhang ◽  
Jie Yang ◽  
Xiaoli Li ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Optical Properties ◽  
Electric Field ◽  
Electronic Properties ◽  
Hydrogen Ions ◽  
Lithium Ions ◽  
Ion Migration ◽  
Electronic And Optical Properties ◽  
Acidic Ionic Liquid ◽  
Optical And Electronic Properties

The intercalation of hydrogen ions and lithium ions in MoO3 films is realized by acidic ionic liquid gating, which modifies the electronic and optical properties of MoO3 films, is promising for designing multifunctional devices.

scholarly journals Exploring the transposition effects on the electronic and optical properties of Cs2AgSbCl6via a combined computational-experimental approach

2018 ◽  
Vol 6 (5) ◽  
pp. 2346-2352 ◽  
Author(s):  
Jun Zhou ◽  
Ximing Rong ◽  
Maxim S. Molokeev ◽  
Xiuwen Zhang ◽  
Zhiguo Xia
Keyword(s):  
Optical Properties ◽  
Electronic Properties ◽  
Experimental Approach ◽  
Double Perovskite ◽  
Defect Model ◽  
Electronic And Optical Properties ◽  
Optical And Electronic Properties

The anti-site defect model was established to investigate transposition influence on the optical and electronic properties of the double-perovskite Cs2AgSbCl6.

Computational study on strain and electric field tunable electronic and optical properties of InTe monolayer

2021 ◽  
Vol 151 ◽  
pp. 106816
Author(s):  
Thi-Nga Do ◽  
Vo T.T. Vi ◽  
Nguyen T.T. Binh ◽  
Nguyen N. Hieu ◽  
Nguyen V. Hieu
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Computational Study ◽  
Electronic And Optical Properties

Direct Laser Cooling Schemes for the Triatomic SOH and SeOH Molecules Based on Ab Initio Electronic Properties

2020 ◽  
Author(s):  
Li Liu ◽  
Chuan-Lu Yang ◽  
Zhaopeng Sun ◽  
Meishan Wang ◽  
Xiano-Guang Ma
Keyword(s):  
Optical Properties ◽  
Ab Initio ◽  
Electronic Properties ◽  
Laser Cooling ◽  
Promising Method ◽  
Optical Scheme ◽  
Electronic And Optical Properties ◽  
Cold Molecules ◽  
Direct Laser

The direct laser cooling is a very promising method to obtain cold molecules for various applications. However, a molecule with satisfactory electronic and optical properties for the optical scheme is...

scholarly journals Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21824-21831
Author(s):  
X. Q. Deng ◽  
R. Q. Sheng ◽  
Q. Jing
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
External Electric Field ◽  
Photogenerated Electron ◽  
Electron Hole ◽  
Electronic And Optical Properties ◽  
Vertical Strain

The CBM (VBM) of the heterostructure is mainly contributed by the BAs (arsenene), which will favor the separation of photogenerated electron–hole pairs.

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

2021 ◽  
Author(s):  
Dahua Ren ◽  
Qiang Li ◽  
Kai Qian ◽  
Xingyi Tan
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Visible Light ◽  
Electronic Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Alignment ◽  
Promising Candidate ◽  
Functional Theory ◽  
External Strain

Abstract Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we have studied the structural, electronic and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with suitable indirect band gaps of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced by comparison with the GaS monolayer and SnS2 monolayer in the visible light. Our results suggest that GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in visible light.

Sign in / Sign up

Export Citation Format

Share Document