Improving the charge injection in bottom contact organic transistor by carbon electrodes

2022 ◽  
Author(s):  
Congcong Huang ◽  
Xiaohai Ding ◽  
Xiaochen Ren ◽  
Xi Yu ◽  
Wenping Hu
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Charge Injection ◽  
Carbon Electrodes ◽  
Device Performance ◽  
Metal Electrodes ◽  
Semiconductor Interface ◽  
Bottom Contact ◽  
Organic Transistor

The electrode/organic semiconductor interface in OFETs is critical to device performance. Traditional metal electrodes often produce unfavorable interfacial dipole when they are in contact with organic semiconductors, inducing a larger...

Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes
Keyword(s):  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Contact Interface ◽  
Organic Thin Film Transistor ◽  
Metal Electrodes ◽  
Free Surfaces ◽  
Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

scholarly journals On Practical Charge Injection at the Metal/Organic Semiconductor Interface

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Akichika Kumatani ◽  
Yun Li ◽  
Peter Darmawan ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi
Keyword(s):  
Organic Semiconductor ◽  
Charge Injection ◽  
Semiconductor Interface ◽  
Metal Organic

Attaining air stability in high performing n-type phthalocyanine based organic semiconductors

2021 ◽  
Author(s):  
Nathan J Yutronkie ◽  
Benjamin King ◽  
Owen Alfred Melville ◽  
Benoit Hugo Lessard ◽  
Jaclyn L Brusso
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Strong Electron ◽  
Electron Conduction ◽  
High Performing ◽  
Silicon Phthalocyanine

The perfluorinated analogue of silicon phthalocyanine (F2-F16SiPc) has been synthesized as a novel air-stable n-type organic semiconductor. The design of F2-F16SiPc facilitates strong electron conduction through peripheral fluorination that deepens...

scholarly journals Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

2015 ◽  
Vol 114 (24) ◽  
Author(s):  
Nicholas R. Monahan ◽  
Kristopher W. Williams ◽  
Bharat Kumar ◽  
Colin Nuckolls ◽  
X.-Y. Zhu
Keyword(s):  
Direct Observation ◽  
Organic Semiconductor ◽  
Hole Pair ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Pair Separation ◽  
Electron Hole Pair
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