Kinetics of the gas-phase iodine-catalyzed isomerization of methyl acetylene and the propargyl stabilization energy

1971 ◽  
Vol 67 ◽  
pp. 2085 ◽  
Author(s):  
R. Walsh
Keyword(s):  
Gas Phase ◽  
Stabilization Energy ◽  
Kinetics Of

The radical stabilization energy due to an a-chlorine atom from the kinetics of the thermal isomerization of 1-Chlorobicyclo[2,2,0]hexane in the gas and liquid phase

1975 ◽  
Vol 28 (9) ◽  
pp. 2079 ◽  
Author(s):  
RK Solly ◽  
EN Cain
Keyword(s):  
Liquid Phase ◽  
Least Squares ◽  
Gas Phase ◽  
Chlorine Atom ◽  
Excellent Agreement ◽  
Thermal Isomerization ◽  
Stabilization Energy ◽  
Arrhenius Parameters ◽  
Temperature Range ◽  
Kinetics Of

The rate of isomerization of 1-chlorobicyclo[2,2,0]hexane to 2- chlorohexa-1,5-diene, both in the gas phage and in solution, has been measured over the temperature range 409-497 K. The Arrhenius parameters derived from these rates are represented by the equations ����������������������������� log(kg/s-1)=(13.49�0.08)-(148.2�0.6/θ ����������������������������� log(ka/s-1)=(13.21�0.12)-(144.44�0.50)/θ� and����������������������������� log(kb/s-1)=(13.25�0.44)-(144.8�1.6)/θ where the subscripts g, a and b refer to the gas phase, tetrachloroethylene as solvent and o-dichloro-benzene as solvent respectively, θ = 19.15 kJ mol-1 and the errors are least-squares deviations. A radical stabilization energy of 5�2 kJ mol-1 for the α- chlorine atom derived from these Arrhenius parameters is in excellent agreement with the value derived from kinetics of the isomerization of 1,4-dichlorobicyclo[2,2,0]hexane and from the thermochemistry of chloroethyl radicals.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Gas-Phase Anionic Metal Clusters are Model Systems for Surface Oxidation: Kinetics of the Reactions of Mn– with O2 (M = V, Cr, Co, Ni; n = 1–15)

2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  
Keyword(s):  
Gas Phase ◽  
Oxidation Kinetics ◽  
Metal Clusters ◽  
Surface Oxidation ◽  
Model Systems ◽  
Kinetics Of
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