Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
1991 ◽
Vol 56
(10)
◽
pp. 2020-2029
Keyword(s):
The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.
Further study on kinetic modeling of sunflower oil methanolysis catalyzed by calcium-based catalysts
2016 ◽
Vol 22
(2)
◽
pp. 137-144
◽
2012 ◽
Vol 33
(4)
◽
pp. 651-665
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Keyword(s):
Keyword(s):
2012 ◽
Vol 608-609
◽
pp. 1375-1382
Keyword(s):
1998 ◽
Vol 13
(5)
◽
pp. 1120-1123
◽
2016 ◽
Vol 14
(4)
◽
pp. 929-938
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Keyword(s):
1996 ◽
Vol 11
(5)
◽
pp. 1114-1119
◽
Keyword(s):
Keyword(s):
2010 ◽
Vol 660-661
◽
pp. 593-598
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Keyword(s):