Evidence for alloy scattering from pressure-induced changes of electron mobility in In1−xGaxAsyP1−y

1980 ◽  
Vol 16 (14) ◽  
pp. 560 ◽  
Author(s):  
A.R. Adams ◽  
H.L. Tatham ◽  
J.R. Hayes ◽  
A.N. El-Sabbahy ◽  
P.D. Greene
Keyword(s):  
Electron Mobility ◽  
Alloy Scattering ◽  
Induced Changes

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

2004 ◽  
Vol 85 (14) ◽  
pp. 2962-2964 ◽  
Author(s):  
B. S. Kang ◽  
S. Kim ◽  
F. Ren ◽  
J. W. Johnson ◽  
R. J. Therrien ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Induced Changes

HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies

1986 ◽  
Vol 90 ◽  
Author(s):  
M. A. Berding ◽  
A.-B. Chen ◽  
A. Sher
Keyword(s):  
Bond Length ◽  
Band Gap ◽  
Electronic Properties ◽  
Line Width ◽  
Electron Mobility ◽  
Impurity Scattering ◽  
Vacancy Formation ◽  
Alloy Scattering ◽  
Effective Masses ◽  
Formation Energies

ABSTRACTThe alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. We have calculated the electron mobility in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg0.7Cd0.3Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 502-505 ◽  
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Strong Impact ◽  
High Electron ◽  
High Electron Mobility ◽  
Alloy Scattering ◽  
The Impact ◽  
Scanning Electron

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.

Electron mobility in InAs1−xSbxand the effect of alloy scattering

1991 ◽  
Vol 69 (6) ◽  
pp. 3571-3577 ◽  
Author(s):  
Vincent W. L. Chin ◽  
R. J. Egan ◽  
T. L. Tansley
Keyword(s):  
Electron Mobility ◽  
Alloy Scattering

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

2002 ◽  
Vol 93 (1-3) ◽  
pp. 143-146 ◽  
Author(s):  
Ralph Neuberger ◽  
Gerhard Müller ◽  
Martin Eickhoff ◽  
Oliver Ambacher ◽  
Martin Stutzmann
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility ◽  
Channel Current ◽  
Induced Changes
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