Optimised multiple quantum well phase modulator

1989 ◽  
Vol 25 (20) ◽  
pp. 1349 ◽  
Author(s):  
P.J. Bradley ◽  
G. Parry ◽  
J.S. Roberts
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Phase Modulator ◽  
Multiple Quantum

InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure

1994 ◽  
Vol 6 (2) ◽  
pp. 208-210 ◽  
Author(s):  
N. Yoshimoto ◽  
K. Kawano ◽  
Y. Hasumi ◽  
H. Takeuchi ◽  
S. Kondo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spot Size ◽  
Phase Modulator ◽  
Multiple Quantum

A novel optical bistable multiple-quantum-well phase modulator

1992 ◽  
Vol 4 (11) ◽  
pp. 1225-1227 ◽  
Author(s):  
C. Park ◽  
K.T. Shiralagi ◽  
R. Droopad ◽  
G.N. Maracas
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Phase Modulator ◽  
Multiple Quantum

Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulator

1990 ◽  
Vol 57 (22) ◽  
pp. 2285-2287 ◽  
Author(s):  
H. K. Tsang ◽  
J. B. D. Soole ◽  
H. P. LeBlanc ◽  
R. Bhat ◽  
M. A. Koza ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Phase Modulator ◽  
Multiple Quantum ◽  
Optical Phase

InGaAs/InP multiple quantum well waveguide phase modulator

1987 ◽  
Vol 50 (7) ◽  
pp. 368-370 ◽  
Author(s):  
U. Koren ◽  
T. L. Koch ◽  
H. Presting ◽  
B. I. Miller
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Phase Modulator ◽  
Multiple Quantum

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Sign in / Sign up

Export Citation Format

Share Document