Transfer of 3 in GaAs film on silicon substrate by proton implantation process

The experiment discusses the issue of high-energy implant to the resist thickness and how the resist etched away during implantation process. The resist that is use as a mask or material to block the dopant ion such as Phosphorous, Boron or Arsenic introduces into silicon substrate. It is a common practice by all semiconductor industrial players to use photoresist as their protection on desired area in which purposely set as non-implanted area. The research benefits the engineer on determine the sufficient photoresist thickness for specific implant energy.

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Evaluation and Control of Plastic Deformation in GaAs Film on Si Substrate by Means of Crystal Plasticity Analysis

MRS Proceedings ◽

10.1557/proc-280-403 ◽

1992 ◽

Vol 280 ◽

Author(s):

Tetsuya Ohashi

Keyword(s):

Plastic Deformation ◽

Continuum Mechanics ◽

Crystal Plasticity ◽

Silicon Substrate ◽

Room Temperature ◽

Surface Region ◽

Gaas Film ◽

Si Substrate ◽

New Approach ◽

And Control

ABSTRACTDislocation accumulation in patterned gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is numerically simulated under a continuum mechanics approximation. A new approach to suppression of dislocation accumulation is proposed where selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to keep the surface region of the film almost dislocation free.

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Simulation of the proton implantation process in silicon

physica status solidi (c) ◽

10.1002/pssc.201600038 ◽

2016 ◽

Vol 13 (10-12) ◽

pp. 750-755

Author(s):

Martin Faccinelli ◽

Moriz Jelinek ◽

Thomas Wuebben ◽

Johannes G. Laven ◽

Hans-Joachim Schulze ◽

...

Keyword(s):

Proton Implantation ◽

Implantation Process

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Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2003.817146 ◽

2003 ◽

Vol 13 (11) ◽

pp. 487-489 ◽

Cited By ~ 48

Author(s):

K.T. Chan ◽

A. Chin ◽

Y.D. Lin ◽

C.Y. Chang ◽

C.X. Zhu ◽

...

Keyword(s):

Integrated Antennas ◽

Proton Implantation ◽

Implantation Process

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Development of Hybrid Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Boron Implantation Process into Pre-amorphized Silicon Substrate

10.7567/ssdm.2005.p1-21 ◽

2005 ◽

Author(s):

Tsuyoshi Masuda ◽

Hideyuki Tsuboi ◽

Michihisa Koyama ◽

Akira Endou ◽

Momoji Kubo ◽

...

Keyword(s):

Molecular Dynamics ◽

Silicon Substrate ◽

Quantum Chemical ◽

Tight Binding ◽

Molecular Dynamics Method ◽

Boron Implantation ◽

Implantation Process ◽

Quantum Chemical Molecular Dynamics ◽

Dynamics Method

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Zinc oxide nanocluster formation by low energy ion implantation

MRS Proceedings ◽

10.1557/proc-829-b2.21 ◽

2004 ◽

Vol 829 ◽

Cited By ~ 12

Author(s):

I. Muntele ◽

P. Thevenard ◽

C. Muntele ◽

B. Chhay ◽

D. Ila

Keyword(s):

Zinc Oxide ◽

Optical Properties ◽

Ion Implantation ◽

Optical Spectroscopy ◽

Silicon Substrate ◽

Low Energy ◽

Variable Size ◽

Implantation Process ◽

Zn Ions ◽

Energy Dose

ABSTRACTVariable size nanocluster embedded in silicon substrate were obtained by low energy implantation methods. We used optical spectroscopy to measure the optical properties of the implanted samples. The implantation parameters like the ions energy, dose and sputtering rate were calculated with SRIM [13]. Most of the implanted Zn ions (83%) clustered and oxidized during the implantation process, with the remaining 17% being oxidized during annealing in air.

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Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126494 ◽

1987 ◽

Vol 45 ◽

pp. 340-341

Author(s):

H. L. Tsai ◽

J. W. Lee

Keyword(s):

Growth Process ◽

Molecular Beam ◽

Substrate Surface ◽

Lattice Misfit ◽

Device Fabrication ◽

Silicon Substrates ◽

Defect Structures ◽

Gaas Film ◽

Substrate Quality ◽

Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

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