Broadband semiconductor saturable absorber mirror at 1.55 [micro sign]m using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector
2005 ◽
Vol 278
(1-4)
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pp. 751-755
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2013 ◽
Vol 11
(7)
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pp. 071401-71404
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2007 ◽
Vol 19
(16)
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pp. 1263-1265
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2004 ◽
Vol 19
(8)
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pp. 1010-1014
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2017 ◽
Vol 260
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pp. 10-15
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2010 ◽
Vol 28
(12)
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pp. 1783-1788
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