Broadband semiconductor saturable absorber mirror at 1.55 [micro sign]m using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector

2001 ◽  
Vol 37 (6) ◽  
pp. 374 ◽  
Author(s):  
N. Xiang ◽  
O. Okhotnikov ◽  
A. Vainionpää ◽  
M. Guina ◽  
M. Pessa
2005 ◽  
Vol 278 (1-4) ◽  
pp. 751-755 ◽  
Author(s):  
A. Vainionpää ◽  
S. Suomalainen ◽  
A. Isomäki ◽  
O. Tengvall ◽  
M. Pessa ◽  
...  

2006 ◽  
Vol 955 ◽  
Author(s):  
Fen Lin ◽  
Ning Xiang ◽  
Xin Cai Wang ◽  
Jesudoss Arokiaraj ◽  
Wei Liu ◽  
...  

ABSTRACTA broadband GaN-based semiconductor saturable absorber mirror (SESAM) with a dielectric SiO2/Si3N4 distributed Bragg reflector (DBR) operating at wavelength around 415 nm was fabricated. Serious oscillation fringes due to the light interference were observed in the SESAM's reflectance spectrum. Such oscillation in reflectivity can impede the function of the saturable absorber. Simulations showed that by removing the sapphire substrate and thinning the GaN buffer layer, oscillation fringes could be significantly reduced. Experiments were carried out and the results agreed well with the simulation prediction.


2013 ◽  
Vol 11 (7) ◽  
pp. 071401-71404 ◽  
Author(s):  
H. Ahmad H. Ahmad ◽  
F. D. Muhammad F. D. Muhammad ◽  
M. Z. Zulkifli M. Z. Zulkifli ◽  
S. W. Harun S. W. Harun

2020 ◽  
Author(s):  
Nikolay A. Kalyuzhnyy ◽  
Viktor M. Emelyanov ◽  
Sergey A. Mintairov ◽  
Mariia V. Nahimovich ◽  
Roman A. Salii ◽  
...  

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