Deposition and properties of polycrystalline -SiC films using LPCVD with different dopant amount

S. Noh; X. Fu; L. Chen; M. Mehregany

doi:10.1049/el:20060865

Nitrogen Doped Polcrystalline 3C-Sic Films Deposited by LPCVD for MEMS Applications

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference ◽

10.1109/sensor.2007.4300179 ◽

2007 ◽

Cited By ~ 2

Author(s):

X. A. Fu ◽

J. Trevino ◽

S. Noh ◽

C. A. Zorman ◽

M. Mehregany

Keyword(s):

Nitrogen Doped ◽

Sic Films

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Initial study on the structure and photoluminescence properties of SiC films doped with Al

Applied Surface Science ◽

10.1016/j.apsusc.2005.10.013 ◽

2006 ◽

Vol 252 (12) ◽

pp. 4340-4344 ◽

Cited By ~ 10

Author(s):

Z.D. Sha ◽

X.M. Wu ◽

L.J. Zhuge

Keyword(s):

Initial Study ◽

Photoluminescence Properties ◽

Sic Films

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Effect of the vacuum degree on the orientation and the microstructure of β-SiC films prepared by laser chemical vapour deposition

Materials Letters ◽

10.1016/j.matlet.2016.06.091 ◽

2016 ◽

Vol 182 ◽

pp. 81-84 ◽

Cited By ~ 3

Author(s):

Bin Li ◽

Qi Li ◽

Hirokazu Katsui ◽

Takashi Goto ◽

Rong Tu

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Vacuum Degree ◽

Sic Films

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A study of electrical properties and microstructure of nitrogen-doped poly-SiC films deposited by LPCVD

Sensors and Actuators A Physical ◽

10.1016/j.sna.2006.12.024 ◽

2007 ◽

Vol 136 (2) ◽

pp. 613-617 ◽

Cited By ~ 16

Author(s):

Sangsoo Noh ◽

Xiaoan Fu ◽

Li Chen ◽

Mehran Mehregany

Keyword(s):

Electrical Properties ◽

Nitrogen Doped ◽

Sic Films

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Fracture of Polycrystalline 3C-SiC Films in Microelectromechanical Systems

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2004.838372 ◽

2004 ◽

Vol 13 (6) ◽

pp. 972-976 ◽

Cited By ~ 19

Author(s):

D. Gao ◽

C. Carraro ◽

V. Radmilovic ◽

R.T. Howe ◽

R. Maboudian

Keyword(s):

Microelectromechanical Systems ◽

Sic Films

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Brillouin scattering study on the wave properties in thin SiC films

Ultrasonics ◽

10.1016/j.ultras.2004.01.093 ◽

2004 ◽

Vol 42 (1-9) ◽

pp. 391-394

Author(s):

Mami Matsukawa ◽

Satoshi Murata ◽

Takashi Matsumoto ◽

Takaomi Matsutani ◽

Masato Kiuchi

Keyword(s):

Brillouin Scattering ◽

Scattering Study ◽

Wave Properties ◽

Sic Films

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Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapour deposition

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/10/018 ◽

1995 ◽

Vol 10 (10) ◽

pp. 1418-1422 ◽

Cited By ~ 4

Author(s):

Z C Feng ◽

C C Tin ◽

R Hu ◽

T K Yue

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Sic Films

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Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(00)00629-7 ◽

2001 ◽

Vol 175-177 ◽

pp. 569-574 ◽

Cited By ~ 3

Author(s):

K Volz ◽

Ch Klatt ◽

W Ensinger

Keyword(s):

Ion Implantation ◽

Plasma Immersion Ion Implantation ◽

Sic Films

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Friction and Wear Properties of Magnetron Sputtered DLC/SiC Films on Magnesium Alloy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.610-613.853 ◽

2009 ◽

Vol 610-613 ◽

pp. 853-858 ◽

Cited By ~ 3

Author(s):

Xiao Jing Xu ◽

Deng Fu Xia

Keyword(s):

Friction And Wear ◽

High Hardness ◽

High Wear Resistance ◽

Modulus Ratio ◽

Wear Properties ◽

Silicon Carbon ◽

Alloy Az91d ◽

The Mean ◽

Friction And Wear Properties ◽

Sic Films

The nano-indentation response and the friction/wear properties of DLC/SiC (diamond-like carbon/silicon carbon) double layer thin films deposited on Mg alloy (AZ91D) substrate using magnetron sputtering technique at room temperature were investigated. The results show that the DLC films displayed low nano-hardness (3.05 GPa), low Young's modulus (24.67 GPa) but high hardness-to-modulus ratio (0.124). The films-substrate system exhibited a good friction and wear properties with the mean friction coefficient of about 0.175, the special wear rate in the magnitude order of 10−6 mm3 m−1 N−1 together with little film-cracking and interface-delaminating, when sliding against Si3N4 (silicon nitride) ball using ball-on-disc wear tester under dry frictional condition. The high wear-resistance is in accordance with high ductility of the films, good modulus match in the films-substrate system, and high hardness-to-modulus ratio of the films. The underlying factors are discussed and are believed to be due to the substrate is Mg, a metal with high activity.

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Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.207 ◽

2008 ◽

Vol 600-603 ◽

pp. 207-210 ◽

Cited By ~ 5

Author(s):

Marcin Zielinski ◽

Marc Portail ◽

Thierry Chassagne ◽

Yvon Cordier

Keyword(s):

Gaseous Phase ◽

Growth Temperature ◽

Growth Conditions ◽

Silicon Substrates ◽

Phase Growth ◽

Growth Duration ◽

Strain Control ◽

Heteroepitaxial Layers ◽

Oriented Layers ◽

Sic Films

We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.

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