Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 207-210 ◽  
Author(s):  
Marcin Zielinski ◽  
Marc Portail ◽  
Thierry Chassagne ◽  
Yvon Cordier
Keyword(s):  
Gaseous Phase ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
Phase Growth ◽  
Growth Duration ◽  
Strain Control ◽  
Heteroepitaxial Layers ◽  
Oriented Layers ◽  
Sic Films

We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.

Stresses and Adhesion of Thin Polycrystalline 3C SiC Films Grown by CVD on Silicon Substrates

1993 ◽  
Vol 327 ◽  
Author(s):  
L.M. Ivanova ◽  
V.V. Kovalenko ◽  
T.M. Tkacheva
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Thermal Annealing ◽  
Growth Conditions ◽  
Hydrogen Atmosphere ◽  
Interface Stress ◽  
Silicon Substrates ◽  
Optimal Conditions ◽  
Thin Polycrystalline ◽  
Sic Films

AbstractSiC thin films less than 1 μm thick are grown by thermal decomposition of CH3SiC13 in a hydrogen atmosphere in an open CVD system. The interface stress is shown to be depend on the growth conditions. The optimal conditions for the preparation of uniform SiC films have been determined. Thermal annealing of the films has also been studied, and the conditions that provide for relaxation of the interface stresses are determined.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

2010 ◽  
Vol 645-648 ◽  
pp. 865-868 ◽  
Author(s):  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Daniel Alquier ◽  
M. Italia ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Stress Measurement ◽  
Bulk Material ◽  
Raman Shift ◽  
Silicon Substrates ◽  
Free Standing ◽  
Element Analysis ◽  
Micro Fabrication ◽  
Sic Films

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Substrates ◽  
Phosphorus Doping ◽  
Forward Current ◽  
Pressure Chemical ◽  
Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

Low-Temperature Diffusivity of Hydrogen in Different Silicon Substrates

1995 ◽  
Vol 378 ◽  
Author(s):  
Xiaojun Deng ◽  
Bhushan L. Sopori
Keyword(s):  
Low Temperature ◽  
Carbon Content ◽  
Oxygen Concentration ◽  
Hydrogen Diffusion ◽  
Growth Conditions ◽  
Growth Speed ◽  
Silicon Substrates ◽  
Vacancy Mechanism ◽  
Speed Increase

AbstractThe diffusivity of deuterium (D) at 250°C was determined in silicon samples grown by different techniques. It is found that the diffusivity increases with the growth speed, increase in carbon content and a decrease in oxygen concentration of the substrate. These growth conditions correlate well with the concentration of vacancy-type defects in the as-grown state. Hence, we conclude that a vacancy mechanism is responsible for low-temperature hydrogen diffusion in silicon. The highest diffusivity for hydrogen, calculated from these data, was found to be 3 × 10−7 cm2/s.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

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