Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

Download Full-text

Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region

Optics Express ◽

10.1364/oe.25.000415 ◽

2017 ◽

Vol 25 (1) ◽

pp. 415 ◽

Cited By ~ 23

Author(s):

Aiqin Tian ◽

Jianping Liu ◽

Liqun Zhang ◽

ZengCheng Li ◽

Masao Ikeda ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Green Laser ◽

Threshold Current Density ◽

Interface Engineering ◽

Low Threshold

Download Full-text

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

MRS Proceedings ◽

10.1557/proc-595-f99w1.3 ◽

1999 ◽

Vol 595 ◽

Author(s):

Monica Hansen ◽

Paul Fini ◽

Lijie Zhao ◽

Amber Abare ◽

Larry A. Coldren ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Internal Quantum Efficiency ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Laser ◽

Low Dislocation Density ◽

Multi Quantum Well ◽

Improved Characteristics

AbstractInGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

Download Full-text

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004014 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 8-13

Author(s):

Monica Hansen ◽

Paul Fini ◽

Lijie Zhao ◽

Amber Abare ◽

Larry A. Coldren ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Internal Quantum Efficiency ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Laser ◽

Low Dislocation Density ◽

Fold Reduction ◽

Multi Quantum Well

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a two-fold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

Download Full-text