scholarly journals Improved space charge transport model in bi‐layer dielectrics—considering carrier dynamic equilibrium

High Voltage ◽  
2020 ◽  
Vol 5 (2) ◽  
pp. 176-183 ◽  
Author(s):  
Hucheng Liang ◽  
Boxue Du ◽  
Jin Li ◽  
Hang Yao ◽  
Zehua Wang
Keyword(s):  
Space Charge ◽  
Charge Transport ◽  
Transport Model ◽  
Dynamic Equilibrium ◽  
Carrier Dynamic

Development of a space-charge transport model for ion-exchange membranes

AIChE Journal ◽  
1990 ◽  
Vol 36 (7) ◽  
pp. 1061-1074 ◽  
Author(s):  
Angel G. Guzmán-Garcia ◽  
Peter N. Pintauro ◽  
Mark W. Verbrugge ◽  
Robert F. Hill
Keyword(s):  
Ion Exchange ◽  
Space Charge ◽  
Charge Transport ◽  
Transport Model ◽  
Ion Exchange Membranes

Multicomponent space-charge transport model for ion-exchange membranes

AIChE Journal ◽  
2000 ◽  
Vol 46 (6) ◽  
pp. 1177-1190 ◽  
Author(s):  
Yahan Yang ◽  
Peter N. Pintauro
Keyword(s):  
Ion Exchange ◽  
Space Charge ◽  
Charge Transport ◽  
Transport Model ◽  
Ion Exchange Membranes

scholarly journals Space Charge Accumulation at Material Interfaces in HVDC Cable Insulation Part II—Simulations of Charge Transport

Energies ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1750
Author(s):  
Espen Doedens ◽  
E. Markus Jarvid ◽  
Raphaël Guffond ◽  
Yuriy V. Serdyuk
Keyword(s):  
Surface Roughness ◽  
Space Charge ◽  
Charge Transport ◽  
Transport Model ◽  
Charge Injection ◽  
Charge Trapping ◽  
Material Interfaces ◽  
Cable Insulation ◽  
High Voltage Direct Current ◽  
Cable Systems

Extruded high voltage direct current (HVDC) cable systems contain interfaces with poorly understood microscopic properties, particularly surface roughness. Modelling the effect of roughness on conduction in cable insulation is challenging, as the available results of macroscopic measurements give little information about microscopic charge distributions at material interfaces. In this work, macroscopic charge injection from interfaces is assessed by using a bipolar charge transport model, which is validated against a series of space charge measurements on cable peelings with different degrees of surface roughness. The electric field-dependent conduction and charge trapping effects stimulated by the injection current originating from rough surfaces are assessed. It is shown that by accounting for roughness enhanced charge injection with the parameters derived in part I of the paper, reasonable agreement between computed and measured results can be achieved at medium field strengths (10–40 kV/mm).

HOLOGRAM RECORDING AND ERASURE IN GaAs:Cr WITH SIMULTANEOUSLY APPLIED ELECTRIC AND MAGNETIC FIELDS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250053 ◽  
Author(s):  
DHEERAJ SHARMA ◽  
UMESH GUPTA ◽  
DEVENDRA MOHAN
Keyword(s):  
Magnetic Fields ◽  
Electric Field ◽  
Space Charge ◽  
Charge Transport ◽  
Crucial Role ◽  
Transport Model ◽  
Numerical Estimation ◽  
Hologram Recording ◽  
Electric And Magnetic Fields ◽  
Applied Fields

Externally applied fields play crucial role in the enhancement of space charge electric field (Esc) in photorefractive (PR) materials. Using band-charge transport model, Esc (~105V/m) is obtained in presence of externally applied dc electric (E0) and magnetic (B0) fields simultaneously. Numerical estimation of GaAs:Cr shows that in presence of externally applied fields (optimum value of E0 = 5 × 102 V/m and B0 = 640 gauss), diffraction efficiency ~90% can be observed. To further elaborate the above result, a typical behavior of recording and erasure of hologram with respect to time has been investigated. Result manifest that GaAs:Cr is efficient, ultrafast writing and erasing media for PR-grating.

Sign in / Sign up

Export Citation Format

Share Document