Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

A silicon-based dual-material double-gate tunnel field-effect transistor with optimized performance

10.1002/jnm.2220 ◽

2017 ◽

Vol 30 (6) ◽

pp. e2220 ◽

Cited By ~ 5

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Silicon Based ◽

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Cited By ~ 4

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

A pseudo 2-D surface potential model of a dual material double gate junctionless field effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0710-4 ◽

2015 ◽

Vol 14 (3) ◽

pp. 686-693 ◽

Cited By ~ 4

Author(s):

Ashutosh Kumar Agrawal ◽

P. N. V. R. Koutilya ◽

M. Jagadesh Kumar

Keyword(s):

Surface Potential ◽

Field Effect ◽

Field Effect Transistor ◽

Potential Model ◽

Double Gate ◽

Effect Transistor ◽

Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab194d ◽

2019 ◽

Vol 34 (6) ◽

pp. 065008 ◽

Cited By ~ 1

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

An Accurate Model for Threshold Voltage Analysis of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-020-00553-8 ◽

2020 ◽

Cited By ~ 2

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Accurate Model ◽

Effect Transistor ◽

An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications

Journal of Electrical Engineering and Technology ◽

10.5370/jeet.2014.9.1.247 ◽

2014 ◽

Vol 9 (1) ◽

pp. 247-253 ◽

Cited By ~ 14

Author(s):

T.S. Arun Samuel ◽

N.B. Balamurugan

Keyword(s):

Low Power ◽

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Characterization and modeling of dual material double gate tunnel field effect transistor using superposition approximation method

Concurrency and Computation Practice and Experience ◽

10.1002/cpe.4860 ◽

2018 ◽

Vol 31 (14) ◽

Cited By ~ 1

Author(s):

A. Maria Jossy ◽

T. Vigneswaran ◽

S. Malarvizhi ◽

K. K. Nagarajan

Keyword(s):

Approximation Method ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Superposition Approximation ◽

Analytical Modelling and Performance Analysis of Dielectric Pocket-Induced Double-Gate Tunnel Field-Effect Transistor

IETE Technical Review ◽

10.1080/02564602.2017.1381049 ◽

2017 ◽

Vol 36 (1) ◽

pp. 17-26 ◽

Cited By ~ 4

Author(s):

Priyanka Saha ◽

Tripty Kumari ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Analytical Modelling ◽

Double Gate ◽

Effect Transistor ◽

And Performance