Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)

Hema Mehta; Harsupreet Kaur

doi:10.1088/1361-6641/ab194d

Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab194d ◽

2019 ◽

Vol 34 (6) ◽

pp. 065008 ◽

Cited By ~ 1

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2018.5293 ◽

2019 ◽

Vol 13 (7) ◽

pp. 1039-1048 ◽

Cited By ~ 1

Author(s):

Dinesh Kumar Dash ◽

Priyanka Saha ◽

Subir Kumar Sarkar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Analytical Modelling ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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A silicon-based dual-material double-gate tunnel field-effect transistor with optimized performance

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2220 ◽

2017 ◽

Vol 30 (6) ◽

pp. e2220 ◽

Cited By ~ 5

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Silicon Based ◽

Dual Material

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A 2-D semi-analytical model of double-gate tunnel field-effect transistor

Journal of Semiconductors ◽

10.1088/1674-4926/36/5/054002 ◽

2015 ◽

Vol 36 (5) ◽

pp. 054002 ◽

Cited By ~ 2

Author(s):

Huifang Xu ◽

Yuehua Dai ◽

Ning Li ◽

Jianbin Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Cited By ~ 4

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

Journal of Applied Physics ◽

10.1063/1.4808452 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214506 ◽

Cited By ~ 6

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2315294 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1936-1942 ◽

Cited By ~ 78

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Transport ◽

Interband Tunneling ◽

Effect Transistor ◽

Gate Tunneling ◽

Dual Material

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Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.054201 ◽

2017 ◽

Vol 56 (5) ◽

pp. 054201 ◽

Cited By ~ 3

Author(s):

Hui Fang Xu ◽

Bang Gui Guan

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Double Gate ◽

Two Dimensional ◽

Oxide Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A pseudo 2-D surface potential model of a dual material double gate junctionless field effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0710-4 ◽

2015 ◽

Vol 14 (3) ◽

pp. 686-693 ◽

Cited By ~ 4

Author(s):

Ashutosh Kumar Agrawal ◽

P. N. V. R. Koutilya ◽

M. Jagadesh Kumar

Keyword(s):

Surface Potential ◽

Field Effect ◽

Field Effect Transistor ◽

Potential Model ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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