High power millimetre wave pulse sensor for W-band

2007 ◽  
Vol 1 (3) ◽  
pp. 757 ◽  
Author(s):  
Ž. Kancleris ◽  
R. Simniškis ◽  
M. Dagys ◽  
V. Tamošiūnas
Keyword(s):  
High Power ◽  
Millimetre Wave ◽  
Wave Pulse ◽  
W Band ◽  
Pulse Sensor

W-band uni-travelling-carrier photodiode module for high-power photonic millimetre-wave generation

2002 ◽  
Vol 38 (22) ◽  
pp. 1376 ◽  
Author(s):  
H. Ito ◽  
T. Furuta ◽  
T. Ito ◽  
Y. Muramoto ◽  
K. Tsuzuki ◽  
...  
Keyword(s):  
High Power ◽  
Wave Generation ◽  
Millimetre Wave ◽  
W Band

scholarly journals Experimental Investigation of Resistive Sensor for High Power Millimetre Wave Pulse Measurement

2008 ◽  
Vol 113 (3) ◽  
pp. 1091-1094 ◽  
Author(s):  
R. Simniškis ◽  
M. Dagys ◽  
Ž Kancleris ◽  
V. Tamošiūnas
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Millimetre Wave ◽  
Pulse Measurement ◽  
Wave Pulse ◽  
Resistive Sensor

High-power TM 01 millimeter wave pulse sensor in circular waveguide

2015 ◽  
Vol 24 (9) ◽  
pp. 098701
Author(s):  
Guang-Qiang Wang ◽  
Xiang-Qin Zhu ◽  
Zai-Gao Chen ◽  
Xue-Feng Wang ◽  
Li-Jun Zhang
Keyword(s):  
Millimeter Wave ◽  
High Power ◽  
Circular Waveguide ◽  
Wave Pulse ◽  
Pulse Sensor

Resistive sensor for high power millimetre wave pulse measurement

2007 ◽  
Author(s):  
Zilvinas Kancleris ◽  
Mindaugas Dagys ◽  
Rimantas Simniskis ◽  
Vincas Tamosiunas
Keyword(s):  
High Power ◽  
Millimetre Wave ◽  
Pulse Measurement ◽  
Wave Pulse ◽  
Resistive Sensor

A High-Power Planar W-Band Čerenkov Maser with Two-Dimensional Distributed Feedback: Design Elements and Modeling Results

2021 ◽  
Author(s):  
N.Yu. Peskov ◽  
A. A. Vikharev ◽  
N. S. Ginzburg ◽  
V.Yu. Zaslavsky ◽  
A. M. Malkin ◽  
...  
Keyword(s):  
High Power ◽  
Distributed Feedback ◽  
Two Dimensional ◽  
Design Elements ◽  
Feedback Design ◽  
W Band

High power broadband W-band gyrotron traveling wave amplifier

2003 ◽  
Author(s):  
D.B. McDermott ◽  
H.H. Song ◽  
L.R. Barnett ◽  
Y. Hirata ◽  
A.T. Lin ◽  
...  
Keyword(s):  
High Power ◽  
Traveling Wave ◽  
W Band ◽  
Traveling Wave Amplifier

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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