Editorial: Device modelling for circuits, components and systems

2003 ◽  
Vol 150 (1) ◽  
pp. 63
Author(s):  
Donard De Cogan
Keyword(s):  
Device Modelling

scholarly journals Device modelling and model verification for the Euclid CCD273 detector

2012 ◽  
Author(s):  
A. Clarke ◽  
D. Hall ◽  
N. Murray ◽  
A. Holland ◽  
D. Burt
Keyword(s):  
Model Verification ◽  
Device Modelling

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

Sign in / Sign up

Export Citation Format

Share Document