Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers

1998 ◽  
Vol 145 (5) ◽  
pp. 275-280 ◽  
Author(s):  
J.R. Meyer ◽  
D. Zhang ◽  
W.W. Bewley ◽  
C.L. Felix ◽  
L. Goldberg ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Type Ii ◽  
Vertical Cavity Surface ◽  
Vertical Cavity

1.1-µm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction

2007 ◽  
Vol 46 (No. 21) ◽  
pp. L512-L514 ◽  
Author(s):  
Kenichiro Yashiki ◽  
Naofumi Suzuki ◽  
Kimiyoshi Fukatsu ◽  
Takayoshi Anan ◽  
Hiroshi Hatakeyama ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tunnel Junction ◽  
Cavity Surface ◽  
Type Ii ◽  
Low Resistance ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Ingaas Quantum Well

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

2015 ◽  
Vol 21 (6) ◽  
pp. 453-461 ◽  
Author(s):  
Stephan Sprengel ◽  
Ganpath Kumar Veerabathran ◽  
Florian Federer ◽  
Alexander Andrejew ◽  
Markus-Christian Amann
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

MID-IR Vertical Cavity Surface-Emitting Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
J. R. Meyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Optically Pumped ◽  
Pulsed Mode ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

2015 ◽  
Vol 106 (15) ◽  
pp. 151102 ◽  
Author(s):  
S. Sprengel ◽  
A. Andrejew ◽  
F. Federer ◽  
G. K. Veerabathran ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

Recent developments in the area of vertical cavity surface emitting lasers

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Recent Developments ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Failure Analysis of Vertical Cavity Surface Emission Laser Diodes

2003 ◽  
Author(s):  
F. Siegelin ◽  
C. Brillert
Keyword(s):  
Failure Analysis ◽  
Complete Analysis ◽  
Cavity Surface ◽  
Dislocation Network ◽  
Plan View ◽  
Surface Emission ◽  
Optical Output ◽  
Vertical Cavity Surface ◽  
Vcsel Arrays ◽  
Vertical Cavity

Abstract A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.

Sign in / Sign up

Export Citation Format

Share Document