Failure Analysis of Vertical Cavity Surface Emission Laser Diodes

Author(s):  
F. Siegelin ◽  
C. Brillert

Abstract A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.

2014 ◽  
Vol 39 (19) ◽  
pp. 5582
Author(s):  
Yonan Su ◽  
Chun-Yan Lin ◽  
Ray-Ching Hong ◽  
Wen-Xing Yang ◽  
Chien-Chung Jeng ◽  
...  

2012 ◽  
Vol 1432 ◽  
Author(s):  
Robert W. Herrick

ABSTRACTVertical-Cavity Surface-Emitting Lasers are making up a large and growing share of the world’s production of semiconductor lasers. But the 850 nm GaAs quantum well VCSELs that make up most of present product are highly vulnerable to dislocation networks. In this paper, we discuss how materials selection affects the reliability of semiconductor lasers generally. We then describe the most common failure mechanisms observed in VCSELs, and what precautions are used to prevent them. We finish with a brief discussion of reliability testing and failure analysis.


2008 ◽  
Vol 10 (4) ◽  
pp. 044016 ◽  
Author(s):  
Chia-Sheng Chou ◽  
Ray-Kuang Lee ◽  
Peng-Chun Peng ◽  
Hao-chung Kuo ◽  
Gray Lin ◽  
...  

Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.А. Блохин ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
...  

AbstractThe emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.


Sign in / Sign up

Export Citation Format

Share Document