InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

2015 ◽  
Vol 21 (6) ◽  
pp. 453-461 ◽  
Author(s):  
Stephan Sprengel ◽  
Ganpath Kumar Veerabathran ◽  
Florian Federer ◽  
Alexander Andrejew ◽  
Markus-Christian Amann
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

2015 ◽  
Vol 106 (15) ◽  
pp. 151102 ◽  
Author(s):  
S. Sprengel ◽  
A. Andrejew ◽  
F. Federer ◽  
G. K. Veerabathran ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

MID-IR Vertical Cavity Surface-Emitting Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
J. R. Meyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Optically Pumped ◽  
Pulsed Mode ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.

780 nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

1996 ◽  
Vol 32 (14) ◽  
pp. 1287 ◽  
Author(s):  
H.-E. Shin ◽  
Y.-G. Ju ◽  
J.-H. Shin ◽  
J.-H. Ser ◽  
T. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

2018 ◽  
Vol 52 (1) ◽  
pp. 93-99 ◽  
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. G. Kuzmenkov ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Line Width ◽  
Single Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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